Qdatasheet_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

IRG4RC10SDPBF

  

Datasheet PDF - International Rectifier

IRG4RC10SDPBF image

Part Name
IRG4RC10SDPBF

Other PDF
  no available.

PDF

page
11 Pages

File Size
333 kB

MFG CO.
IR
International Rectifier 

Features
• Extremely low voltage drop 1.1V(typ) @ 2A
• S-Series: Minimizes power dissipation at up to 3
    KHz PWM frequency in inverter drives, up to 4
    KHz in brushless DC drives.
• Tight parameter distribution
• IGBT co-packaged with HEXFREDTM ultrafast,
    ultra-soft-recovery anti-parallel diodes for use
    in bridge configurations
• Industry standard TO-252AA package
• Lead-Free
   
Benefits
• Generation 4 IGBTs offer highest efficiencies
    available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
    IGBTs . Minimized recovery characteristics require
    less/no snubbing
• Lower losses than MOSFETs conduction and
    Diode losses
   


Part Name
Description
PDF
MFC CO.
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Infineon Technologies
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Infineon Technologies
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Infineon Technologies
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Infineon Technologies
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Infineon Technologies
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Infineon Technologies
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Infineon Technologies
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
New Jersey Semiconductor
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
Vishay Semiconductors

Share Link: 


All Rights Reserved © qdatasheet.com [ Privacy Policy ] [ Contact Us ]