1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Part Name(s) : NX8340MD-CC
California Eastern Laboratories.
Description : NEC's 1310 nm AIGaInAs MQW-DFB LASER DIODE MODULE WITH DRIVER IN SMT PACKAGE FOR 10 Gb/s APPLICATIONS
Part Name(s) : NX8346TS
NEC => Renesas Technology
Description : 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Part Name(s) : NX8341UL-AZ NX8341UJ-AZ NX8341UH-AZ NX8341UB-AZ NX8341TL-AZ NX8341TJ-AZ NX8341 NX8341TB-AZ NX8341UN-AZ NX8341TB
California Eastern Laboratories.
Description : 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION (Rev - 2006)
Part Name(s) : NX8341 NX8341TB NX8341TB-AZ NX8341TJ NX8341TJ-AZ NX8341TL NX8341TL-AZ NX8341TP NX8341TP-AZ NX8341UB
California Eastern Laboratories.
Description : 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Part Name(s) : NX8346TB NX8346TY
NEC => Renesas Technology
Description : 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Part Name(s) : NX8346TS NX8346TS-AZ
California Eastern Laboratories.
Description : 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Part Name(s) : NX6314EH
Renesas Electronics
Description : LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
Part Name(s) : NX6314EH NX6314EH-AZ
California Eastern Laboratories.
Description : LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
Part Name(s) : NX6309GH
Renesas Electronics
Description : 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Part Name(s) : NX6309GH NX6309GH-AZ
California Eastern Laboratories.
Description : 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Part Name(s) : NX8349TS NX8349YK NX8349XK
Renesas Electronics
Description : LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Part Name(s) : NX5310 NX5310EH-AZ NX5310EK-AZ NX5310EK NX5310EH
California Eastern Laboratories.
Description : 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE (Rev - 2006)
Part Name(s) : NX8369TS
California Eastern Laboratories.
Description : LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Part Name(s) : NX8369TS
Renesas Electronics
Description : LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Part Name(s) : NX8349TB
California Eastern Laboratories.
Description : LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Part Name(s) : NX5312 NX5312EH-AZ NX5312EK-AZ
California Eastern Laboratories.
Description : LASER DIODE
Part Name(s) : NX6308GH PL10692EJ03V0DS
Renesas Electronics
Description : 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Part Name(s) : NX8369TB
California Eastern Laboratories.
Description : LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Part Name(s) : NX8369TB
Renesas Electronics
Description : LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Part Name(s) : NX8349TB
Renesas Electronics
Description : LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION