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Part Name(s) : AM2533 AM2533V AM2533DC AM2833PC AM2833DC AM2833DM AM2833 AMD
Advanced Micro Devices
Description : 1024-Bit Static Shift Registers View

1024-Bit Static Shift Registers

Part Name(s) : MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X MWS5114E3 Intersil
Intersil
Description : 1024-Word x 4-Bit LSI Static RAM View

Description
The MWS5114 is a 1024 word by 4-bit Static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output and utilizes a single power supply of 4.5V to 6.5V.
The MWS5114 is supplied in 18 lead, hermetic, dual-in-line sidebrazed ceRAMic packages (D suffix) and in 18 lead dual in-line plastic packages (E suffix).

Features
• Fully Static Operation
• Industry Standard 1024 x 4 Pinout (Same as Pinouts for 6514, 2114, 9114, and 4045 Types)
• Common Data Input and Output
• Memory Retention for Standby Battery Voltage as Low as 2V Min
• All Inputs and Outputs Directly TTL Compatible
• Three-State Outputs
• Low Standby and Operating Power

 

Part Name(s) : CDP1821C CDP1821C/3 CDP1821C3 CDP1821CD3 CDP1821CD/3 Intersil
Intersil
Description : High-Reliability CMOS 1024-Word x 1-Bit Static RAM View

Description
The CDP1821C/3 is a 1024-word x 1-bit CMOS silicon-on-sapphire (SOS), fully Static, random-access memory designed for use in CDP1800 microprocessor systems. This device has a recommended operating voltage range of 4V to 6.5V

Features
Static CMOS Silicon-On-Sapphire Circuitry CD4000-Series Compatible
• Compatible with CDP1800-Series Microprocessors at Maximum Speed
• Fast Access Time. . . . . . . . . . . 100ns Typ. at VDD = 5V
• Single Voltage Supply
• No Precharge or External Clocks Required
• Low Quiescent and Operating Power
• Separate Data Inputs and Outputs
• High Noise Immunity . . . . . . . . . . . . . . . . . . 30% of VDD
• Memory Retention for Standby Battery Voltage Down to 2V at +25°C
• Latch-Up-Free Transient-Radiation Tolerance

Part Name(s) : LF48410 LF48410JC30 LF48410JC25 Logic-Devices
LOGIC Devices
Description : 1024 x 24-bit Video HistogRAMmer View

DESCRIPTION
The LF48410 is capable of generating histogRAMs and Cumulative Distribution Functions of video images. It may also be used as a look up table, a bin accumulator, a delay memory (delay and subtract also possible), or a single port RAM. The on-chip 1024 x 24-bit memory array facilitates histogRAMs of images up to 4K x 4K pixels with a 10-bit pixel resolution.

FEATURES
❑ 40 MHz Data Input and Computation Rate
1024 x 24-bit Memory Array
❑ HistogRAMs of Images up to 4K x 4K with 10-bit Pixel Resolution
❑ Memory Array Flash Clear
❑ User-ProgRAMmable Modes: HistogRAM, HistogRAM Accumulate, Look Up Table, Bin Accumulate, Delay Memory, Delay and Subtract, Single Port RAM
❑ Replaces Harris HSP48410
❑ 84-pin PLCC, J-Lead


Part Name(s) : DS2431 DS2431P DS2431PTR DS2431TR DS2431X Dallas
Dallas Semiconductor -> Maxim Integrated
Description : 1024-Bit 1-Wire EEPROM View

GENERAL DESCRIPTION
The DS2431 is a 1024-Bit, 1-Wire® EEPROM chip organized as four memory pages of 256 bits each. Data is written to an 8-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, the four memory pages can individually be write protected or put in EPROM-emulation mode, where bits can only be changed from a 1 to a 0 state. The DS2431 communicates over the single conductor 1-Wire bus. The communication follows the standard Dallas Semiconductor 1-Wire protocol. Each device has its own unalterable and unique 64-
bit ROM registration number that is factory lasered into the chip. The registration number is used to address the device in a multidrop 1-Wire net environment.

FEATURES
1024 Bits of EEPROM Memory Partitioned into Four Pages of 256 Bits
Individual Memory Pages can be Permanently Write Protected or Put in EPROM-Emulation Mode ("Write to 0")
Switchpoint Hysteresis and Filtering to Optimize Performance in the Presence of Noise
IEC 1000-4-2 Level 4 ESD Protection (8kV Contact, 15kV Air)
Reads and Writes Over a Wide Voltage Range of 2.8V to 5.25V from -40°C to +85°C
Communicates to Host with a Single Digital Signal at 15.4kbps or 111kbps Using 1-Wire Protocol

APPLICATIONS
Accessory/PC Board Identification
Medical Sensor Calibration Data Storage
Analog Sensor Calibration Including IEEE
P1451.4 Smart Sensors
Ink and Toner Print Cartridge Identification
After-Market Management of Consumables

Part Name(s) : HM-6518/883 HM-6518883 HM1-6518/883 Intersil
Intersil
Description : 1024 x 1 CMOS RAM View

Description
The HM-6518/883 is a 1024 x 1 Static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.

Features
• This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
• Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max
• Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . 180ns Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . .at 2.0V Min
• TTL Compatible Input/Output
• High Output Drive - 2 TTL Loads
• High Noise Immunity
• On-Chip Address Register
• Two-Chip Selects for Easy Array Expansion
• Three-State Output

Part Name(s) : M2148H M2148H-3 Intel
Intel
Description : HIGH SPEED 1024 X 4 BIT Static RAM View
Part Name(s) : HM-6508/883 HM-6508883 HM1-6508B/883 HM1-6508/883 Intersil
Intersil
Description : 1024 x 1 CMOS RAM View

Description
The HM-6508/883 is a 1024 x 1 Static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.

Features
• This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
• Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max
• Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . 180ns Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . .2.0V Min
• TTL Compatible Input/Output
• High Output Drive - 2 TTL Loads
• On-Chip Address Register

Part Name(s) : PCF8594C-2 PCF8594C-2P PCF8594C-2T PCF85XXC-2 Philips
Philips Electronics
Description : 256 to 1024×8-bit CMOS EEPROMs with I2C-bus interface View

GENERAL DESCRIPTION
The PCF85xxC-2 is a family of floating gate Electrically Erasable ProgRAMmable Read Only Memories (EEPROMs) with 2, 4 and 8 kbits (256, 512 and 1024×8-bit). By using an internal redundant storage code it is fault tolerant to single bit errors. This feature dRAMatically increases the reliability compared to conventional EEPROMs. Power consumption is low due to the full CMOS technology used. The progRAMming voltage is generated on-chip, using a voltage multiplier.

FEATURES
• Low power CMOS:
– maximum operating current:
2.0 mA (PCF8582C-2)
2.5 mA (PCF8594C-2)
4.0 mA (PCF8598C-2)
– maximum standby current 10µA (at 6.0 V), typical 4µA
• Non-volatile storage of:
– 2 kbits organized as 256×8-bit (PCF8582C-2)
– 4 kbits organized as 512×8-bit (PCF8594C-2)
– 8 kbits organized as 1024×8-bit (PCF8598C-2)
• Single supply with full operation down to 2.5 V
• On-chip voltage multiplier
• Serial input/output I2C-bus
• Write operations:
– byte write mode
– 8-byte page write mode (minimizes total write time per byte)
• Read operations:
– sequential read
– random read
• Internal timer for writing (no external components)
• Power-on-reset
• High reliability by using a redundant storage code
• Endurance: 1000000 Erase/Write (E/W) cycles at Tamb=22°C
10 years non-volatile data retention time
• Pin and address compatible to: PCF8570, PCF8571, PCF8572 and PCF8581.

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