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Mitsubishi
MITSUBISHI ELECTRIC
Description : 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION
The M5M5V108DFP,VP,KV are a 1048576-bit CMOS STATIC RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power STATIC RAM.
They are low standby current and low operation current and ideal for the battery back-up application.
The M5M5V108DVP,KV are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD).

FEATURES
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by S1,S2
● Data hold on +2V power supply
● Three-state outputs : OR - tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
   M5M5V108DFP ············ 32pin 525mil SOP
   M5M5V108DVP,RV ············ 32pin 8 X 20 mm2 TSOP
   M5M5V108DKV,KR ············ 32pin 8 X 13.4 mm2 TSOP

APPLICATION
   Small capacity memory units

Part Name(s) : M5M51016BTR-70LL
Mitsubishi
MITSUBISHI ELECTRIC
Description : 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION
The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS STATIC RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power STATIC RAM.
They are low standby current and low operation current and ideal for the battery back-up application.
The M5M5V108CVP,RV,KV,KR are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD). Two types of devices are available.
M5M5V108CVP,KV(normal lead bend type package), M5M5V108CRV,KR(reverse lead bend type package).Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
● Low stand-by current 0.1µA (typ.)
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by S1,S2
● Data hold on +2V power supply
● Three-state outputs : OR - tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
   M5M5V108CFP       ············ 32pin 525mil SOP
   M5M5V108CVP,RV ············ 32pin 8 X 20 mm2 TSOP
   M5M5V108CKV,KR ············ 32pin 8 X 13.4 mm2 TSOP

APPLICATION
   Small capacity memory units

Part Name(s) : M5M51008KR-55H
Mitsubishi
MITSUBISHI ELECTRIC
Description : 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION
The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS STATIC RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS
technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power STATIC RAM.
They are low standby current and low operation current and ideal for the battery back-up application. The M5M51008DVP,RV,KV are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD). Two types of devices are available.
M5M51008DVP(normal lead bend type package), M5M51008DRV(reverse lead bend type package).Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by S1,S2
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
   M5M51008DFP  ············ 32pin  525mil  SOP
   M5M51008DVP,RV ············ 32pin  8 X 20 mm2  TSOP
   M5M51008DKV  ············ 32pin  8 X 13.4 mm2  TSOP

APPLICATION
Small capacity memory units

Renesas
Renesas Electronics
Description : 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION
The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS STATIC RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS
technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power STATIC RAM.
They are low standby current and low operation current and ideal for the battery back-up application. The M5M51008DVP,RV,KV are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD). Two types of devices are available. M5M51008DVP(normal lead bend type package), M5M51008DRV(reverse lead bend type package).Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by S1,S2
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
    M5M51008DFP  ············ 32pin  525mil  SOP
    M5M51008DVP,RV············ 32pin  8 X 20 mm2 TSOP
    M5M51008DKV  ············ 32pin  8 X 13.4 mm2  TSOP

APPLICATION
Small capacity memory units

Description : 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS STATIC RAM organized as 65536 word by 16-bit which are fabricated using highperformance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power STATIC RAM.
They are low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
● Single +3.3V power supply
● Low stand-by current 0.3µA (typ.)
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by CS, BC1 & BC2
● Data hold on +2V power supply
● Three-state outputs : OR-tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
    M5M51016BTP,RT .............................. 44pin 400mil TSOP(II)

APPLICATION
    Small capacity memory units

Description : 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION
The M5M5V108DFP,VP,KV are a 1048576-bit CMOS STATIC RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power STATIC RAM.
They are low standby current and low operation current and ideal for the battery back-up application.
The M5M5V108DVP,KV are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD).

FEATURES
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by S1,S2
● Data hold on +2V power supply
● Three-state outputs : OR - tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
   M5M5V108DFP ············ 32pin 525mil SOP
   M5M5V108DVP,RV ············ 32pin 8 X 20 mm2 TSOP
   M5M5V108DKV,KR ············ 32pin 8 X 13.4 mm2 TSOP

APPLICATION
   Small capacity memory units

Description : 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS STATIC RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power STATIC RAM.
They are low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
● Single +3.3V power supply
● Low stand-by current 0.3µA (typ.)
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by CS, BC1 & BC2
● Data hold on +2V power supply
● Three-state outputs : OR-tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
    M5M51016BTP,RT .............................. 44pin 400mil TSOP(II)

APPLICATION
    Small capacity memory units

Mitsubishi
MITSUBISHI ELECTRIC
Description : 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS STATIC RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power STATIC RAM.
They are low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
● Single +3.0V power supply
● Low stand-by current 0.3É A (typ.)
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by CS, BC1 & BC2
● Data hold on +2V power supply
● Three-state outputs : OR-tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
   M5M51016BTP,RT .............................. 44pin 400mil TSOP(II)

APPLICATION
   Small capacity memory units

Description : 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION
The M5M5V108DFP,VP,KV are a 1048576-bit CMOS STATIC RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power STATIC RAM.
They are low standby current and low operation current and ideal for the battery back-up application.
The M5M5V108DVP,KV are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD).

FEATURES
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by S1,S2
● Data hold on +2V power supply
● Three-state outputs : OR - tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
   M5M5V108DFP ············ 32pin 525mil SOP
   M5M5V108DVP,RV ············ 32pin 8 X 20 mm2 TSOP
   M5M5V108DKV,KR ············ 32pin 8 X 13.4 mm2 TSOP

APPLICATION
   Small capacity memory units

Description : 1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM

DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS STATIC RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power STATIC RAM.
They are low stand-by current and low operation current and ideal for the battery back-up application.

FEATURES
● Single +5.0V power supply
● Low stand-by current 0.3µA (typ.)
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by CS, BC 1 & BC2
● Data hold on +2V power supply
● Three-state outputs : OR-tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
● M5M51016BTP,RT .............................. 44pin 400mil TSOP(II)

APPLICATION
   Small capacity memory units

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