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Description : Low Jitter Frequency Translator

Description
The FX-500 is a complete crystal-based frequency translator used in communications applications where low jitter is paramount.
Performance advantages include superior jitter per formance, high output frequencies and small pack age size. Advanced custom ASIC technology results in a highly robust, reliable and predictable device.
The device is packaged in a 6 pin J-Lead ceramic package with a hermetic seam welded lid.

Features
• Complete Frequency Translator to 77.760 MHz
• 3.3 Volt or 5.0 Volt Supply
• Capable of locking to an 8 kHz pulse/ BITS clock
• Tri-State Output allows board test
• Lock Detect
• J-Lead Ceramic Package
• Advanced Custom ASIC Technology
• Absolute Pull Range Performance to ±100 ppm
• CMOS Output
• Commercial or Industrial Temperature Range
• EIA Compatible Tape and Reel Packaging

Applications
• Frequency Translation, Clock Smoothing
• Telecom - SONET/SDH/ATM/DWDM
• Datacom - DSLAM, DSLAR, Access Nodes
• Cable Modem Head End
• Base Station - GSM, CDMA

Description : Voltage Controlled SAW Oscillator

Description
The VS-500 is a SAW based voltage controlled oscillator that operates at the fundamental frequency of the internal SAW filter. This resonator is a high Q quartz device that enables the circuit to achieve low phase jitter performance over a wide operating temperature range. The oscillator is housed in a hermetically sealed J-lead surface mount package offered on tape and reel. It has an output disable to facilitate on-board testing.

Features
• Improved High Performance ASIC
• Industry Standard Package, 9 x 14 x 4.5 mm
• Output Frequencies from 155 MHz to 850 MHz
• 3.3 V or 5.0 V Operation
• At 155.52 MHz, Jitter < 0.50 ps-rms (12 kHz to 20 MHz)
• At 622.08 MHz, Jitter < 0.30 ps-rms (50 kHz to 80 MHz)
• LV-PECL, PECL, or ECL Configurations
• Complementary Outputs
• Output Disable Feature

Applications
PLL circuits for Clock Smoothing and Frequency Translation
     Description                   Standard
   • 10G Fibre Channel      INCITS/T11 Project 1413-D
   • 10GbE LAN / WAN      IEEE 802.3ae
   • OC-192                        ITU-T G.709
   • SONET / SDH             GR-253-CORE Issue3

Description : Voltage Controlled SAW Oscillator

Description
The VS-500 is a SAW based voltage controlled oscillator that operates at the fundamental frequency of the internal SAW filter. This resonator is a high Q quartz device that enables the circuit to achieve low phase jitter performance over a wide operating temperature range. The oscillator is housed in a hermetically sealed J-lead surface mount package offered on tape and reel. It has an output disable to facilitate on-board testing.

Features
• Improved High Performance ASIC
• Industry Standard Package, 9 x 14 x 4.5 mm
• Output Frequencies from 155 MHz to 850 MHz
• 3.3 V or 5.0 V Operation
• At 155.52 MHz, Jitter < 0.50 ps-rms (12 kHz to 20 MHz)
• At 622.08 MHz, Jitter < 0.30 ps-rms (50 kHz to 80 MHz)
• LV-PECL, PECL, or ECL Configurations
• Complementary Outputs
• Output Disable Feature

Applications
PLL circuits for Clock Smoothing and Frequency Translation
    Description                          Standard
• 10G Fibre Channel                INCITS/T11 Project 1413-D
• 10GbE LAN / WAN                IEEE 802.3ae
• OC-192                                  ITU-T G.709
• SONET / SDH                       GR-253-CORE Issue3

Description : 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

PRODUCT DESCRIPTION
The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF200A/400A/800A write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/800A write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.

FEATURES:
• Organized as 128K x16 / 256K x16 / 512K x16
• Single Voltage Read and Write Operations
   – 3.0-3.6V for SST39LF200A/400A/800A
   – 2.7-3.6V for SST39VF200A/400A/800A
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption (typical values at 14 MHz)
   – Active Current: 9 mA (typical)
   – Standby Current: 3 µA (typical)
• Sector-Erase Capability
   – Uniform 2 KWord sectors
• Block-Erase Capability
   – Uniform 32 KWord blocks
• Fast Read Access Time
   – 45 and 55 ns for SST39LF200A/400A
   – 55 ns for SST39LF800A
   – 70 and 90 ns for SST39VF200A/400A/800A
• Latched Address and Data
• Fast Erase and Word-Program
   – Sector-Erase Time: 18 ms (typical)
   – Block-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 70 ms (typical)
   – Word-Program Time: 14 µs (typical)
   – Chip Rewrite Time:
      2 seconds (typical) for SST39LF/VF200A
      4 seconds (typical) for SST39LF/VF400A
      8 seconds (typical) for SST39LF/VF800A
• Automatic Write Timing
   – Internal VPP Generation
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 48-lead TSOP (12mm x 20mm)
   – 48-ball TFBGA (6mm x 8mm)
   – 48-ball WFBGA (4mm x 6mm) for 4M and 8M
   – 48-bump XFLGA (4mm x 6mm) for 4M and 8M

Description : Snap Action Switch

General Purpose Snap Action Switch

• Industry standard design with switching currents of 10A to 21A
• Widely used for applications where long life expectancy and high reliability is required.
• Choose from a variety of levers, terminals and operating forces.
• Right and Left Barrier options are available for the V-21 and V-16 models
• Heat resistant versions of the V-15 and V-10 are available.
• RoHS Compliant

Description : Small Signal Zener Diodes

Features
• These diodes are also available in other case styles and other configurations including: the SOD-123 case with type designation BZT52 series, the dual zener diode common anode configuration in the SOT-23 case with type designation AZ23 series and the dual zener diode common cathode configuration in the SOT-23 case with type designation DZ23 series.
• The Zener voltages are graded according to the international E 24 standard. Standard Zener voltage tolerance is ± 5 %. Replace "C" with "B" for ± 2 % tolerance.
• Silicon Planar Power Zener Diodes
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Description : 5 PIN DIP RANDOM-PHASE TRIAC DRIVER PHOTOCOUPLER

Description
The EL301X(P5), EL302X(P5) and EL305X(P5) series of devices each consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon random phase photo Triac.
They are designed for interfacing between electronic controls and power triacs to control resistive and inductive loads for 115 to 240 VAC operations. .

Features:
• Peak breakdown voltage
    - 250V: EL301X(P5)
    - 400V: EL302X(P5)
    - 600V: EL305X(P5)
• High isolation voltage between input and output (Viso=5000 V rms )
• Compact dual-in-line package
• Pb free and RoHS compliant.
• UL approved (No. E214129)
• VDE approved (No.132249)
• SEMKO approved
• NEMKO approved
• DEMKO approved
• FIMKO approved
• CSA approved
• CQC approved

Applications
• Solenoid/valve controls
• Lamp ballasts
• Static AC power switch
• Interfacing microprocessors to 115 to 240Vac peripherals
• Incandescent lamp dimmers
• Temperature controls
• Motor controls

Description : Superminiature, low coil power consumption.

Features
■ Superminiature, low coil power consumption.
■ Switching capacity up to 15A.
■ PC board mounting.
■ Suitable for household electrical appliance, automation system, instrument and meter.

Description : 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

PRODUCT DESCRIPTION
The SST39LF512/010/020/040 and SST39VF512/010/020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.

Description : 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

Description
The 4N2X, 4N3X, H11AX series of devices each consist of an infrared emitting diode optically coupled to a phototransistor.
They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.

Features:
• 4N2X series: 4N25, 4N26, 4N27, 4N28
• 4N3X series: 4N35, 4N36, 4N37, 4N38
• H11AX series: H11A1, H11A2, H11A3, H11A4, H11A5
• High isolation voltage between input and output
   (Viso=5000 Vrms)
• Creepage distance >7.6mm
• Operating temperature up to +110°C
• Compact dual-in-line package
• Pb free and RoHS compliant.
• UL approved (No. E214129)
• VDE approved (No. 132249)
• SEMKO approval pending
• NEMKO approval pending
• DEMKO approval pending
• FIMKO approval pending
• CSA approval pending

Applications
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs

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