Qdatasheet_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Searchword :
Part Name(s) : MBRS3200T3G
ON Semiconductor
ON Semiconductor
Description : Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 3.0 AMPERE 200 VOLTS

This device employs the Schottky Barrier principle in a large area metalïtoïsilicon Power diode. Stateïofïtheïart geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.

Features
• Small Compact Surface Mountable Package with JïBend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very High Blocking Voltage ï 200 V
• 175°C Operating Junction Temperature
• GuardïRing for Stress Protection
• NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements: AECïQ101 Qualified and PPAP Capable
• All Packages are PbïFree*

Part Name(s) : IPP60R280CFD7
Infineon Technologies
Infineon Technologies
Description : 600V CoolMOSCFD7 Power Transistor

MOSFET
600V CoolMOSCFD7 Power Transistor

CoolMOS™ is a revolutionary technology for high voltage PowerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOSCFD7 is thesuccessor to the CoolMOS™ CFD2 series and is an optimized platformtailored to target soft switching applications such as phase-shift full-bridge(ZVS) and LLC. Resulting from reduced gate charge (Qg), best-in-classreverse recovery charge (Qrr) and improved turn off behavior CoolMOSCFD7 offers highest efficiency in resonant topologies. As part of Infineon’sfast body diode portfolio, this new product series blends all advantages ofa fast switching technology together with superior hard commutationrobustness, without sacrificing easy implementation in the design-inprocess. The CoolMOSCFD7 technology meets highest efficiency andreliability standards and furthermore supports high Power densitysolutions. Altogether, CoolMOSCFD7 makes resonant switchingtopologies more efficient, more reliable, lighter and cooler.

Features
• Ultra-fast body diode
• Low gate charge
• Best-in-class reverse recovery charge (Qrr)
• Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
• Lowest FOM RDS(on)*Qg and RDS(on)*Eoss
• Best-in-class RDS(on) in SMD and THD packages

Benefits
• Excellent hard commutation ruggedness
• Highest reliability for resonant topologies
• Highest efficiency with outstanding ease-of-use / performance tradeoff
• Enabling increased Power density solutions

Potential applications
   Suiteable for Soft Switching topologies
   Optimized for phase-shift full-bridge (ZVS), LLC Applications – Server,
   Telecom, EV Charging



Part Name(s) : IPW65R110CFD7
Infineon Technologies
Infineon Technologies
Description : 650V CoolMOSCFD7 SJ Power Device

MOSFET
650V CoolMOSCFD7 SJ Power Device

The latest 650V CoolMOSCFD7 extends the voltage class offering of the CFD7 family and is a successor to the 650V Cool MOS™ CFD2.

Features
• Ultra-fast body diode
• 650V break down voltage
• Best-in-class RDS(on)
• Reduced switching losses
• Low RDS(on) dependency over temperature

Potential applications
   Suitable for Soft Switching topologies
   Optimized for phase-shift full-bridge(ZVS), LLC Applications–Server,
   Telecom, EV Charging, Solar

Part Name(s) : IPI65R110CFD
Infineon Technologies
Infineon Technologies
Description : 650V CoolMOSCFD7 SJ Power Transistor

Description
CoolMOS™ is a revolutionary technology for high voltage Power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.

Features
• Ultra-fast body diode
• Very high commutation ruggedness
• Extremely low losses due to very low FOM Rdson^Qg and Eoss
• Easy to use/drive
​​​​​​​• Qualified for industrial grade applications according to JEDEC 
   (J-STD20 and JESD22)
• Pb-free plating, Halogen free mold compound

Applications
   650V CoolMOS CFD2 is especially suitable for resonant switching PWM
   stages for e.g. PC Silverbox, LCT TV, Lighting, Server, Telecom and Solar.



Part Name(s) : IPW60R070P6
Infineon Technologies
Infineon Technologies
Description : 600V CoolMOS™ P6 Power Transistor

MOSFET
Metal Oxide Semiconductor Field Effect Transistor

600V CoolMOS™ P6 Power Transistor

Part Name(s) : A1807
ROHM Semiconductor
ROHM Semiconductor
Description : High-voltage Switching Transistor (Telephone Power supply)

High-voltage Switching Transistor (Telephone Power supply)

2SA1807 : -600V, -1A

2SA1826 : -400v, -2A

Part Name(s) : IPAW60R360P7S
Infineon Technologies
Infineon Technologies
Description : 600V CoolMOS P7 Power Transistor

600V CoolMOS P7 Power Transistor

Applications
   PFC, hard switching PWM and resonant switching Power stages .e.g. PC
   Silverbox, Adapter, LCD&PDPTV, Lighting, Server, Telecom&UPS

Part Name(s) : IPU60R600C6
Infineon Technologies
Infineon Technologies
Description : 600V CoolMOS™ C6 Power Transistor

MOSFET
Metal Oxide Semiconductor Field Effect Transistor

600V CoolMOS™ C6 Power Transistor

Applications
   PFC states, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom, UPS.

Part Name(s) : IPZ60R099C7
Infineon Technologies
Infineon Technologies
Description : Metal Oxide Semiconductor Field Effect Transistor

600V Cool MOS™ C7 Power Transistor

Applications
   PFC stages and PWM stages (TTF,LLC) for high Power/performance
   SMPS e.g. Computing, Server, Telecom, UPSandSolar.

Part Name(s) : IPP60R360P7
Infineon Technologies
Infineon Technologies
Description : 600V CoolMOSª P7 Power Transistor

600V CoolMOSª P7 Power Transistor

Applications
   PFC, hard switching PWM and resonant switching Power stages.e.g.PC
   Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom & UPS

12345678910 Next


All Rights Reserved © qdatasheet.com [ Privacy Policy ] [ Contact Us ]