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Part Name(s) : 65N06
KIA Semiconductor Technology
KIA Semiconductor Technology
Description : 65A, 60V N-CHANNEL MOSFET

Description
These N-CHANNEL enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features
65A, 60V, RDS(on)= 0.016Ω @VGS= 10 V
■ Low gate charge ( typical 48nC)
■ Low Crss ( typical 32.5pF)
■ Fast switching
■ 100% avalanche tested
■ Improved dv/dt capability
■ 175º maximum junction temperature rating

Part Name(s) : ATP207 ATP207-TL-H
ON Semiconductor
ON Semiconductor
Description : N-CHANNEL Power MOSFET

N-CHANNEL Power MOSFET
40V, 65A, 9.1mΩ, Single ATPAK

Features
• Low ON-resistance
• 4.5V drive
• Halogen free compliance
• Large current
• Slim package
• Protection diode in

Part Name(s) : FDS5680
Fairchild Semiconductor
Fairchild Semiconductor
Description : 60V N-CHANNEL PowerTrench™ MOSFET

60V N-CHANNEL PowerTrench™ MOSFET

Part Name(s) : FDP5680 FDB5680
Fairchild Semiconductor
Fairchild Semiconductor
Description : 60V N-CHANNEL PowerTrench™ MOSFET

60V N-CHANNEL PowerTrench™ MOSFET

Part Name(s) : FDD5690
Fairchild Semiconductor
Fairchild Semiconductor
Description : 60V N-CHANNEL PowerTrench™ MOSFET (Rev - 1999)

60V N-CHANNEL PowerTrench™ MOSFET

Part Name(s) : FDB5686 FDP5686
Fairchild Semiconductor
Fairchild Semiconductor
Description : 60V N-CHANNEL PowerTrench™ MOSFET

60V N-CHANNEL PowerTrench™ MOSFET

Part Name(s) : FDD5690 FDS5670
Fairchild Semiconductor
Fairchild Semiconductor
Description : 60V N-CHANNEL PowerTrench® MOSFET

60V N-CHANNEL PowerTrench® MOSFET

Part Name(s) : FQP65N06
Thinki Semiconductor Co., Ltd.
Thinki Semiconductor Co., Ltd.
Description : 65A,60V Heatsink Planar N-CHANNEL Power MOSFET

General Description
This N-CHANNEL enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M pkg is well suited for adaptor power unit and small power inverter application.

Features
65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 100 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

Part Name(s) : IRFF034
Semelab - > TT Electronics plc
Semelab - > TT Electronics plc
Description : N-CHANNEL MOSFET in a Hermetically sealed TO39 Metal Package

N-CHANNEL MOSFET in a Hermetically sealed TO39 Metal Package.

N-CHANNEL MOSFET.
    VDSS = 60V
    ID = 16A
    RDS(ON) = 0.05Ω

Part Name(s) : 2SJ605-ZJ J605-ZJ
KEXIN Industrial
KEXIN Industrial
Description : P-Channel MOSFET

■ Features
● VDS (V) =-60V
● ID =-65A
● RDS(ON) < 20mΩ (VGS =-10V)
● RDS(ON) < 31mΩ (VGS =-4V)
● Low Ciss: Ciss = 4600 pF (TYP.)

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