Description These N-CHANNEL enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Features ■ 65A, 60V, RDS(on)= 0.016Ω @VGS= 10 V ■ Low gate charge ( typical 48nC) ■ Low Crss ( typical 32.5pF) ■ Fast switching ■ 100% avalanche tested ■ Improved dv/dt capability ■ 175º maximum junction temperature rating
General Description This N-CHANNEL enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M pkg is well suited for adaptor power unit and small power inverter application.
Features • 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V • Low gate charge ( typical 48 nC) • Low Crss ( typical 100 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating