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Part Name(s) : IPP60R280CFD7
Infineon
Infineon Technologies
Description : 600V CoolMOS™ CFD7 Power Transistor

MOSFET
600V CoolMOS™ CFD7 Power Transistor

CoolMOS™ is a revolutionary technology for high voltage PowerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS™ CFD7 is thesuccessor to the CoolMOS™ CFD2 series and is an optimized platformtailored to target soft switching applications such as phase-shift full-bridge(ZVS) and LLC. Resulting from reduced gate charge (Qg), best-in-classreverse recovery charge (Qrr) and improved turn off behavior CoolMOS™CFD7 offers highest efficiency in resonant topologies. As part of Infineon’sfast body diode portfolio, this new product series blends all advantages ofa fast switching technology together with superior hard commutationrobustness, without sacrificing easy implementation in the design-inprocess. The CoolMOS™ CFD7 technology meets highest efficiency andreliability standards and furthermore supports high Power densitysolutions. Altogether, CoolMOS™ CFD7 makes resonant switchingtopologies more efficient, more reliable, lighter and cooler.

Features
• Ultra-fast body diode
• Low gate charge
• Best-in-class reverse recovery charge (Qrr)
• Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
• Lowest FOM RDS(on)*Qg and RDS(on)*Eoss
• Best-in-class RDS(on) in SMD and THD packages

Benefits
• Excellent hard commutation ruggedness
• Highest reliability for resonant topologies
• Highest efficiency with outstanding ease-of-use / performance tradeoff
• Enabling increased Power density solutions

Potential applications
   Suiteable for Soft Switching topologies
   Optimized for phase-shift full-bridge (ZVS), LLC Applications – Server,
   Telecom, EV Charging



Part Name(s) : IPT60R022S7 60R022S7
Infineon
Infineon Technologies
Description : MOSFET 600V CoolMOS™ SJS7 Power Device

MOSFET 600V CoolMOS™ SJS7 Power Device

IPT60R022S7 enables the best price performance for low frequency switching applications. CoolMOS™ S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency.
CoolMOS™ S7 is optimized for “static switching” and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.

Features
CoolMOS™ S7 technology enables 22mΩ RDS(on) in the smallest footprint
• Optimized price performance in low frequency switching applications
• High pulse current capability
• Kelvin Source pin improves switching performanceat high current
• TOLL package is MSL1 compliant, total Pb-free,has easy visual inspection leads

Potential applications
• Solid state relays and circuit breakers
• Line rectification in high Power/performance applications e.g. Computing, Telecom, UPS and Solar

Infineon
Infineon Technologies
Description : 600V CoolMOS™ P7 Power Transistor

600V CoolMOS™ P7 Power Transistor
​​​​​​​
The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage Power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of bodydiode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.

Features
• Suitable for hard and soft switching (PFC and LLC) due to an outstanding
   commutation ruggedness
• Significant reduction of switching and conduction losses
• Excellent ESD robustness >2kV (HBM) for all products
• Better RDS(on)/package products compared to competition enabled by a
   low RDS(on)*A (below 1Ohm*mm²)
​​​​​​​
Benefits
• Ease of use and fast design-in through low ringing tendency and usage
   across PFC and PWM stages
• Simplified thermal management due to low switching and conduction
   losses
• Increased Power density solutions enabled by using products with
   smaller footprint and higher manufacturing quality due to >2 kV ESD
   protection
• Suitable for a wide variety of applications and Power ranges

Potential applications
   PFC stages, hard switching PWM stages and resonant switching stages
   for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom
   and UPS.

Infineon
Infineon Technologies
Description : 600V CoolMOS™ P7 Power Transistor

600V CoolMOS™ P7 Power Transistor

The CoolMOS™ 7th generation platform is a revolutionary technology forhigh voltage Power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent easeof use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability.Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.

Features
• Suitable for hard and soft switching (PFC and LLC) due to an outstanding
   commutation ruggedness
• Significant reduction of switching and conduction losses
• Excellent ESD robustness >2kV (HBM) for all products
• Better RDS(on)/package products compared to competition enabled by a
   low RDS(on)*A (below 1Ohm*mm²)
• Fully qualified acc. JEDEC for Industrial Applications

Benefits
• Ease of use and fast design-in through low ringing tendency and usage
   across PFC and PWM stages
• Simplified thermal management due to low switching and conduction  losses
• Increased Power density solutions enabled by using products with
   smaller footprint and higher manufacturing quality due to >2 kV ESD
   protection
• Suitable for a wide variety of applications and Power range

Potential applications
   PFC stages, hard switching PWM stages and resonant switching stages
   for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom
   and UPS.

Infineon
Infineon Technologies
Description : 600V CoolMOS™ P7 Power Transistor

MOSFET
600V CoolMOS™ P7 Power Transistor

The CoolMOS™ 7th generation platform is a revolutionary technology forhigh voltage Power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. Itcombines the benefits of a fast switching SJ MOSFET with excellent easeof use, e.g. very low ringing tendency, outstanding robustness of bodydiode against hard commutation and excellent ESD capability.Furthermore, extremely low switching and conduction losses makeswitching applications even more efficient, more compact and muchcooler

Features
• Suitable for hard and soft switching (PFC and LLC) due to an outstanding
   commutation ruggedness
• Significant reduction of switching and conduction losses
• Excellent ESD robustness >2kV (HBM) for all products
• Better RDS(on)/package products compared to competition enabled by a
   low RDS(on)*A (below 1Ohm*mm²)
• Fully qualified acc. JEDEC for Industrial Applications

Benefits
• Ease of use and fast design-in through low ringing tendency and usage
   across PFC and PWM stages
• Simplified thermal management due to low switching and conduction
   losses
• Increased Power density solutions enabled by using products with
   smaller footprint and higher manufacturing quality due to >2 kV ESD
   protection
• Suitable for a wide variety of applications and Power ranges

Potential applications
   PFC stages, hard switching PWM stages and resonant switching stages
   for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom
   and UPS.

Part Name(s) : IPP50R500CE_16
Infineon
Infineon Technologies
Description : 500V CoolMOS™ CE Power Transistor

500V CoolMOS™ CE Power Transistor
​​​​​​​
CoolMOS™ is a revolutionary technology for high voltage PowerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS™ CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting highestefficiency standards. The new series provides all benefits of a fastswitching Superjunction MOSFET while not sacrificing ease of use andoffering the best cost down performance ratio available on the market.

Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• Pb-free plating, Halogen free mold compound
• Qualified for standard grade applications

Applications
   PFC stages, hard switching PWM stages and resonant switching stages
   for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor lighting

Infineon
Infineon Technologies
Description : 600V CoolMOS™ CE Power Transistor

MOSFET
600V CoolMOS™ CE Power Transistor

CoolMOS™ is a revolutionary technology for high voltage PowerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ CE is aprice-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• Pb-free plating, Halogen free mold compound
• Qualified for standard grade applications

Applications
   PFC stages, hard switching PWM stages and resonant switching stages
   for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor Lighting.

Description : 650V CoolMOS™ C6 CFD2 Power Transistor

Description
CoolMOS™ is a revolutionary technology for high voltage Power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation.

Applications
   650V CoolMOS™ CFD2 is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCT TV, Lighting, Server and Telecom.

Infineon
Infineon Technologies
Description : 3650V CoolMOS™ CFD Power Transistor

Description
CoolMOS™ is a revolutionary technology for high voltage Power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and cooler

Features
• Ultra-fast body diode
• Very high commutation ruggedness
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Easy to use/drive
• Pb-free plating, Halogen free mold compound
​​​​​​​• Qualified for industrial grade applications according to JEDEC
   (J-STD20 and JESD22)

Applications
   650V CoolMOS™ CFD is especially suitable for resonant switching PWM stages for
   e.g. PC Silverbox, LCD TV, Lighting, Server,Telecom, and Solar

Part Name(s) : IPW65R080CFDA 65F6080A
Infineon
Infineon Technologies
Description : 650V CoolMOS™ CFDA Power Transistor

Description
CoolMOS™ is a revolutionary technology for high voltage Power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and cooler

Features
• Ultra-fast body diode
• Very high commutation ruggedness
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Easy to use/drive
• Qualified according to AEC Q101
• Green package (RoHS compliant), Pb-free plating, halogen free for mold
   compound

Applications
   650V CoolMOS™ CFDA is designed for switching applications.

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