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SCHOTTKY BARRIER RECTIFIER 3.0 AMPERE 200 VOLTS

This device employs the Schottky Barrier principle in a large area metalïtoïsilicon Power diode. Stateïofïtheïart geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.

Features
• Small Compact Surface Mountable Package with JïBend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very High Blocking Voltage ï 200 V
• 175°C Operating Junction Temperature
• GuardïRing for Stress Protection
• NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements: AECïQ101 Qualified and PPAP Capable
• All Packages are PbïFree*

Power Transistor

GERMANIUM PNP Power Transistor

Medium Power Transistor (50V, 0.5A)

Power Transistor (80V, 0.3A)

CSB507 PNP PLASTIC Power Transistor
CSD313 NPN PLASTIC Power Transistor

Low frequency Power Amplifier Applications

 Power Transistor MODULE 100 A, 600 V, 6 CHANNEL, NPN, Si, Power Transistor

Power Transistor ( -80V, -4A) : 2SB1474, 2SB1342

Power Transistor (80V, 4A) : 2SD1933

2SD1957 Power Transistor (120V, 7A)
2SD2061 Power Transistor (60V, 3A)

PNP SILICON EPITAXIAL Power Transistor (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

The 2SA1714 is a high-speed darlington Power Transistor. This Transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment.

FEATURES
• High DC current amplifiers due to darlington connection
• Large current capacitance and low VCE(sat)
• TO-126 Power Transistor with high Power dissipation
• Complementary Transistor with 2SC4342

Power Transistor ( -100V, - 8A)

Power Transistor  (100V,  8A)

UHF Power Transistor

10 W, 960 MHz UHF Power Transistor NPN SILICON