The S-1112/1122 Series is a positive voltage regulator with a low dropout voltage, high-accuracy output voltage, and low current consumption developed based on CMOS technology.
Features • Output voltage: 1.5 V to 5.5 V, selectable in 0.1 V step • Output voltage accuracy: ±1.0% • Dropout voltage: 190 mV typ. (3.0 V output product, IOUT = 100 mA) • Current consumption: During operation: 50 μA typ., 90 μA max. During power-off: 0.1 μA typ., 1.0 μA max. • Output current: Possible to output 150 mA (VIN ≥ VOUT(S) + 1.0 V)*1 • Output capacitor: A ceramic capacitor of 0.47 μF or more can be used. • Ripple rejection: 80 dB typ. (f = 1.0 kHz) • Built-in overcurrent protection circuit: Limits overcurrent of output transistor. • Built-in ON/OFF circuit: Ensures long battery life. • Operation temperature range: Ta = -40°C to -85°C • Lead-free, Sn 100%, halogen-free*2
*1. Attention should be paid to the power dissipation of the package when the output current is large. *2. Refer to “ Product Name Structure” for details.
Applications • Constant-voltage power supply for battery-powered device • Constant-voltage power supply for personal communication device • Constant-voltage power supply for home electric appliance • Constant-voltage power supply for cellular phone
The S-1167 Series is a positive voltage regulator with ultra low current consumption, high ripple rejection, low drop voltage and high output voltage accuracy developed based on CMOS technology.
Although current consumption is very small with 9 µA typ., S-1167 Series realized the 70 dB of high ripple rejection rate. Besides a 1.0 µF ceramic capacitor is available as an input-and-output capacitor.
Moreover, dropout voltage is also small since output voltage accuracy realizes ±1.0% of high accuracy, and the low-on-resistance transistor is built-in. A built-in Output current protector prevents the load current from exceeding the current capacitance of the output transistor. A shutdown circuit ensures long battery life.
Two packages, SOT-23-5 and SNT-6A(H), are available. Compared with the voltage regulators using the conventional CMOS process, S-1167 Series is the most suitable for the portable equipments with ultra low current consumption and corresponding to the small package.
• Output voltage : 1.5 to 5.5 V, selectable in 0.1 V steps.
• Low equivalent series resistance capacitor can be used : A ceramic capacitor of 1.0 µF or more can be used for the output capacitor.
• Wide input voltage range : 2.0 to 6.5 V
• High-accuracy output voltage : ±1.0%
• Low dropout voltage : 150 mV typ. (3.0 V output product, at IOUT = 100 mA)
• Low current consumption : During operation : 9 µA typ., 16 µA max.
During shutdown : 0.1 µA typ., 0.9 µA max.
• High peak current capacity : 150 mA output is possible. (at VIN ≥ VOUT(S) + 1.0 V)*1
• High ripple rejection : 70 dB typ. (at 1.0 kHz, VOUT = 3.0 V)
• Built-in overcurrent protector : Overcurrent of output transistor can be restricted.
• Built-in shutdown circuit : Ensures long battery life.
• Small package : SOT-23-5, SNT-6A(H)
• Lead-free products
*1. Attention should be paid to the power dissipation of the package when the output current is large.
• Power supply for battery-powered devices
• Power supply for cellular phones
• Power supply for portable equipments
• Industry standard design with switching currents of 10A to 21A • Widely used for applications where long life expectancy and high reliability is required. • Choose from a variety of levers, terminals and operating forces. • Right and Left Barrier options are available for the V-21 and V-16 models • Heat resistant versions of the V-15 and V-10 are available. • RoHS Compliant
The 269-type DFB pump laser module represents a family of thermoelectrically cooled, high-power lasers. These devices achieve stable wavelength performance within the 1420 nm to 1510 nm range, over the full operating temperature range. They are designed as continuous-wave (CW) optical pump sources for dense wavelength-division multiplexing (DWDM) EDFA and Raman applications operating in the C- and L-bands.
■ Low relative intensity noise (RIN)
■ High-coupled rated output power up to 280 mW,CW
■ Wide environmental range
■ Field-proven packaging technology
■ InGaAsP/InP high-power, strained multiple quantum-well (MQW), distributed-feedback (DFB) laser chip design
■ Internal optical isolator (optional)
■ Internal thermoelectric cooler (TEC)
■ InGaAs PIN photodetector back-facet monitor
■ Single-mode and polarization-maintaining fiber pig tails
■ Compact, 14-pin butterfly package
■ Industry compatible package and pinout
Features • These diodes are also available in other case styles and other configurations including: the SOD-123 case with type designation BZT52 series, the Dual zener diode common anode configuration in the SOT-23 case with type designation AZ23 series and the Dual zener diode common cathode configuration in the SOT-23 case with type designation DZ23 series. • The Zener voltages are graded according to the international E 24 standard. Standard Zener voltage tolerance is ± 5 %. Replace "C" with "B" for ± 2 % tolerance. • Silicon Planar Power Zener Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Description The EL301X(P5), EL302X(P5) and EL305X(P5) series of devices each consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon random phase photo Triac. They are designed for interfacing between electronic controls and power triacs to control resistive and inductive loads for 115 to 240 VAC operations. .
Features: • Peak breakdown voltage - 250V: EL301X(P5) - 400V: EL302X(P5) - 600V: EL305X(P5) • High isolation voltage between input and output (Viso=5000 V rms ) • Compact Dual-in-line package • Pb free and RoHS compliant. • UL approved (No. E214129) • VDE approved (No.132249) • SEMKO approved • NEMKO approved • DEMKO approved • FIMKO approved • CSA approved • CQC approved
Applications • Solenoid/valve controls • Lamp ballasts • Static AC power switch • Interfacing microprocessors to 115 to 240Vac peripherals • Incandescent lamp dimmers • Temperature controls • Motor controls
Description The 4N2X, 4N3X, H11AX series of devices each consist of an infrared emitting diode optically coupled to a phototransistor. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.
Features: • 4N2X series: 4N25, 4N26, 4N27, 4N28 • 4N3X series: 4N35, 4N36, 4N37, 4N38 • H11AX series: H11A1, H11A2, H11A3, H11A4, H11A5 • High isolation voltage between input and output (Viso=5000 Vrms) • Creepage distance >7.6mm • Operating temperature up to +110°C • Compact Dual-in-line package • Pb free and RoHS compliant. • UL approved (No. E214129) • VDE approved (No. 132249) • SEMKO approval pending • NEMKO approval pending • DEMKO approval pending • FIMKO approval pending • CSA approval pending
Applications • Power supply regulators • Digital logic inputs • Microprocessor inputs
FEATURES • Silicon planar power Zener diodes • Standard Zener voltage tolerance is ± 5 % with a “B” suffix (e.g.: MMSZ5225B-V), suffix “C” is ± 2 % tolerance • These diodes are also available in MiniMELF case with the designation TZM5225 to TZM5267, DO-35 case with type designation 1N5225 to 1N5267 and SOT-23 case with the type designation MMBZ5225-V to MMBZ5267-V • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912