Qdatasheet_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Searchword :
Description : fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
   - Motor controls
   - Inverter
NPT-technology for 600V applications offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behaviour
   - parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : IGBT/" data-cke-saved-href="//www.infineon.com/IGBT/">//www.infineon.com/IGBT/

Description : fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
   - Motor controls
   - Inverter
NPT-technology for 600V applications offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behaviour
   - parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : IGBT/" data-cke-saved-href="//www.infineon.com/IGBT/">//www.infineon.com/IGBT/

Description : fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
    - Motor controls
    - Inverter
NPT-technology for 600V applications offers:
    - very tight parameter distribution
    - high ruggedness, temperature stable behaviour
    - parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : IGBT/">//www.infineon.com/IGBT/

Description : fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
    - Motor controls
    - Inverter
NPT-technology for 600V applications offers:
    - very tight parameter distribution
    - high ruggedness, temperature stable behaviour
    - parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : IGBT/">//www.infineon.com/IGBT/

Infineon
Infineon Technologies
Description : fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
    - Motor controls
    - Inverter
NPT-technology for 600V applications offers:
    - very tight parameter distribution
    - high ruggedness, temperature stable behaviour
    - parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : IGBT/">//www.infineon.com/IGBT/

Description : fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode

fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode

Allowed number of short circuits: <1000; time between short circuits: >1s.
 • 40lower Eoff compared to previous generation
 • Short circuit withstand time – 10 s
 • Designed for:
    - Motor controls
    - Inverter
    - SMPS
 • NPT-technology offers:
    - very tight parameter distribution
    - high ruggedness, temperature stable behaviour
    - parallel switching capability
 • Qualified according to JEDEC1 for target applications
 • Pb-free lead plating; RoHS compliant
 • Complete product spectrum and PSpice Models : IGBT/">//www.infineon.com/IGBT/

Description : fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• Lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
   - Motor controls
   - Inverter
   - SMPS
NPT-technology offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behaviour
   - parallel switching capability
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : IGBT/" data-cke-saved-href="//www.infineon.com/IGBT/">//www.infineon.com/IGBT/

Infineon
Infineon Technologies
Description : fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 40lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
    - Motor controls
    - Inverter
    - SMPS
NPT-technology offers:
    - very tight parameter distribution
    - high ruggedness, temperature stable behaviour
    - parallel switching capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : IGBT/">//www.infineon.com/IGBT/

Infineon
Infineon Technologies
Description : Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Positive temperature coefficient in VCE(sat)
• very tight parameter distribution
• high ruggedness, temperature stable behaviour
• very high switching speed
• Low EMI
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : IGBT/" data-cke-saved-href="//www.infineon.com/IGBT/">//www.infineon.com/IGBT/

Applications:
• Frequency Converters
• Uninterrupted Power Supply

Part Name(s) : IKW20N60TA K20T60A
Infineon
Infineon Technologies
Description : Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

• Automotive AEC Q101 qualified
• Designed for DC/AC converters for Automotive Application
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time 5s
• TrenchStop® and Fieldstop technology for 600 V applications offers :
    - very tight parameter distribution
    - high ruggedness, temperature stable behavior
    - very high switching speed
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Green Package
• Very soft, fast recovery anti-parallel Emitter Controlled HE diode

12345678910 Next


All Rights Reserved © qdatasheet.com [ Privacy Policy ] [ Contact Us ]