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Description : fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
   - Motor controls
   - Inverter
NPT-technology for 600V applications offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behaviour
   - parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : IGBT/" data-cke-saved-href="//www.infineon.com/IGBT/">//www.infineon.com/IGBT/

Description : fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
    - Motor controls
    - Inverter
NPT-technology for 600V applications offers:
    - very tight parameter distribution
    - high ruggedness, temperature stable behaviour
    - parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : IGBT/">//www.infineon.com/IGBT/

Description : fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
    - Motor controls
    - Inverter
NPT-technology for 600V applications offers:
    - very tight parameter distribution
    - high ruggedness, temperature stable behaviour
    - parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : IGBT/">//www.infineon.com/IGBT/

Infineon
Infineon Technologies
Description : fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
    - Motor controls
    - Inverter
NPT-technology for 600V applications offers:
    - very tight parameter distribution
    - high ruggedness, temperature stable behaviour
    - parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : IGBT/">//www.infineon.com/IGBT/

Infineon
Infineon Technologies
Description : Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

• Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D
• Short circuit withstand time – 10µs
• Designed for :
    - Frequency Converters
    - Uninterrupted Power Supply
• TrenchStop® and Fieldstop technology for 1200 V applications offers :
    - very tight parameter distribution
    - high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : IGBT/">//www.infineon.com/IGBT/

Infineon
Infineon Technologies
Description : Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

• Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP313D
• Short circuit withstand time – 10µs
• Designed for :
    - Frequency Converters
    - Uninterrupted Power Supply
• TrenchStop® and Fieldstop technology for 1200 V applications offers :
    - very tight parameter distribution
    - high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : IGBT/">//www.infineon.com/IGBT/

Description : Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5μs
• Designed for :
    - Variable Speed Drive for washing machines, air conditioners and induction cooking
    - Uninterrupted Power Supply
• TrenchStop® and Fieldstop technology for 600 V applications offers :
    - very tight parameter distribution
    - high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : IGBT/">//www.infineon.com/IGBT/

Description : fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• Lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
   - Motor controls
   - Inverter
   - SMPS
NPT-technology offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behaviour
   - parallel switching capability
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : IGBT/" data-cke-saved-href="//www.infineon.com/IGBT/">//www.infineon.com/IGBT/

Description : fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled diode

fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled diode

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
   - Motor controls
   - Inverter
NPT-technology for 600V applications offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behaviour
   - parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : IGBT/" data-cke-saved-href="//www.infineon.com/IGBT/">//www.infineon.com/IGBT/

Infineon
Infineon Technologies
Description : fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 40lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
    - Motor controls
    - Inverter
    - SMPS
NPT-technology offers:
    - very tight parameter distribution
    - high ruggedness, temperature stable behaviour
    - parallel switching capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : IGBT/">//www.infineon.com/IGBT/

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