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Mid-Infrared Light Emitting DIODE, SMD

Light Emitting DIODEs with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-HIGH-SMD3 has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 3x3 mm

Mid-Infrared Light Emitting DIODE, SMD

Light Emitting DIODEs with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-HIGH-SMD5 has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 5x5 mm

Mid-Infrared Light Emitting DIODE, SMD

Light Emitting DIODEs with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-HIGH-SMD5R has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 5x5 mm with microreflector

ESJC37 is HIGH reliability resin molded type HIGH VOLTAGE DIODE in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin.

Features
• Low VF
• HIGH surge proof resistivity
• HIGH reliability

Applications
• Rectification for microwave oven HIGH VOLTAGE power supply

HIGH VOLTAGE DIODE

ESJA08 is HIGH reliability resin molded type HIGH VOLTAGE DIODE in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin.

Features
Ultra HIGH speed switching
Low VF
HIGH surge resisitivity for CRT discharge
HIGH reliability design
Ultra small pakage

Applications
Rectification for CRT display monitor HIGH VOLTAGE power supply (FBT:Flyback Transformer)

ESJA18 is HIGH reliability resin molded type HIGH VOLTAGE DIODE in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin.

Features
• Ultra HIGH speed switching
• Low VF
• HIGH surge resisitivity for CRT discharge
• HIGH reliability design
• Ultra small pakage

Applications
• Rectification for CRT display monitor HIGH VOLTAGE power supply (FBT:Flyback Transformer)

[Anshan Leadsun Electronics Co., Ltd]

FEATURES
● Low leakage, HIGH surge capability
● HIGH VOLTAGE,fast recovery rectifier
● Tj:-40℃ ~+150℃
● Polyimide passivation technology
● Epoxy resin molding,compact encapsulation
● ROHS compliant

5kv 270mA 100nS

FEATURES
● Fast reverse recovery time
● SMA Package
● Tj:-40℃~+120℃
● ROHS compliant

5kv 270mA 100nS

FEATURES
● Fast reverse recovery time
● SMA Package
● Tj:-40℃~+120℃
● ROHS compliant

FEATURES
● Low leakage,HIGH surge capability
● HIGH VOLTAGE,fast recovery rectifier
● Tj:-40℃ ~+150℃
● Polyimide passivation technology
● Epoxy resin molding,compact encapsulation
● ROHS compliant