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Part Name(s) : MMZ09312BT1 MMZ09312B
Freescale
Freescale Semiconductor
Description : Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier

The MMZ09312B is a 2-- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBeeR at operating voltages from 3 to 5 Volts. The amplifier is housed in a cost--effective, surface mount QFN plastic package.

• Typical Performance: VCC1 = VCC2 = VBIAS = 5 Volts, ICQ = 74 mA

Features
• Frequency: 400--1000 MHz
• P1dB: 29.6 dBm @ 900 MHz
• Power Gain: 31.7 dB @ 900 MHz
• OIP3: 42 dBm @ 900 MHz
• Active Bias Control (adjustable externally)
• Single 3 to 5 Volt Supply
• Performs Well with Digital Predistortion Systems
• Single--ended Power Detector
• Cost--effective QFN Surface Mount Package
• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.

Part Name(s) : MMZ09312BT1 MMZ09312B
NXP
NXP Semiconductors.
Description : Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier

The MMZ09312B is a 2-- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBeeR at operating voltages from 3 to 5 Volts.

• Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 74 mA

Features
• Frequency: 400-1000 MHz
• P1dB: 29.6 dBm @ 900 MHz
• Power Gain: 31.7 dB @ 900 MHz
• OIP3: 42 dBm @ 900 MHz
• Active Bias Control (adjustable externally)
• Single 3 to 5 V Supply
• Performs Well with Digital Predistortion Systems
• Single-ended Power Detector
• Cost-effective 12-pin, 3 mm QFN Surface Mount Package
• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7-inch Reel.

Description : Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier

The MMA20312BV is a 2--stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz such as CDMA, TD--SCDMA, PCS, UMTS and LTE at operating voltages from 3 to 5 V. The amplifier is housed in a cost--effective, surface mount QFN plastic package.

Features
• Frequency: 1800--2200 MHz
• P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
• Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
• OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)
• Active Bias Control (adjustable externally)
• Single 3 to 5 V Supply
• Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package
• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

Description : Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier

The MMA25312B is a 2-stage high efficiency InGaP HBT driver amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and wireless broadband mesh networks. It is suitable for applications with frequencies from 2300 to 2700 MHz using simple external matching components with a 3 to 5 V supply.

Features
• Frequency: 2300-2700 MHz
• P1dB: 31 dBm @ 2500 MHz
• Power Gain: 26 dB @ 2500 MHz
• Third Order Output Intercept Point: 40 dBm @ 2500 MHz
• Active Bias Control (On-chip)
• Single 3 to 5 V Supply
• Single-ended Power Detector
• Cost-effective 12-pin, 3 mm QFN Surface Mount Plastic Package
• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7-inch Reel.

Part Name(s) : MMA25312BT1 MMA25312B
Freescale
Freescale Semiconductor
Description : Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier

The MMA25312B is a high efficiency InGaP HBT amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and wireless broadband mesh networks. It is suitable for applications with frequencies from 2300 to 2700 MHz using simple external matching components with a 3 to 5 volt supply.

Features
• Frequency: 2300-2700 MHz
• P1dB: 31 dBm @ 2500 MHz
• Power Gain: 26 dB @ 2500 MHz
• OIP3: 40 dBm @ 2500 MHz
• Active Bias Control (On-chip)
• Single 3 to 5 Volt Supply
• Single-ended Power Detector
• Cost-effective QFN Surface Mount Package
• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.

Freescale
Freescale Semiconductor
Description : Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier

The MMA20312BV is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz such as CDMA, TD-SCDMA, PCS, UMTS and LTE at operating voltages from 3 to 5 Volts. The amplifier is housed in a cost-effective, surface mount QFN plastic package.

Features
• Frequency: 1800-2200 MHz
• P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
• Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
• OIP3: 44.5 dBm @ 2140 MHz (W-CDMA Application Circuit)
• Active Bias Control (adjustable externally)
• Single 3 to 5 Volt Supply
• Cost-effective QFN Surface Mount Package
• In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.

Part Name(s) : MMA20312BT1 MMA20312B
NXP
NXP Semiconductors.
Description : Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier

The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz such as TD-SCDMA, PCS, UMTS and LTE. The amplifier is housed in a cost-effective, surface mount QFN plastic package.

Features
• Frequency: 1800-2200 MHz
• P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
• Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
• OIP3: 44.5 dBm @ 2140 MHz (W-CDMA Application Circuit)
• Active Bias Control (adjustable externally)
• Single 5 V Supply
• Cost-effective 12-pin, 3 mm QFN Surface Mount Plastic Package
• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7-inch Reel.

Freescale
Freescale Semiconductor
Description : Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier

The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femto cell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz such as TD-SCDMA, PCS, UMTS and LTE. The amplifier is housed in a low-cost, surface mount QFN plastic package.

Features
• Active Bias Control (On-chip)
• Frequency: 1800-2200 MHz
• P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
• Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
• OIP3: 44.5 dBm @ 2140 MHz (W-CDMA Application Circuit)
• Single 5 Volt Supply
• Low Cost QFN Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.

Part Name(s) : MMZ25332B MMZ25332BT1
Freescale
Freescale Semiconductor
Description : Heterojunction Bipolar Transistor Technology (InGaP HBT)

1800--2800 MHz, 26.5 dB 33 dBm InGaP HBT

The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of --50 dBc at an output power of up to 22 dBm, covering frequencies from 1800–2800 MHz. It operates from a supply voltage of 3 to 5 volts. The amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost--effective, surface mount QFN 3×3 package. The device offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance.

• Typical Performance: VCC1 = VCC2 = VBIAS = 5 Volts, ICQ = 400 mA

Features
• Frequency: 1800--2800 MHz
• P1dB: 33 dBm @ 2500 MHz
• Power Gain: 26.5 dB @ 2500 MHz
• OIP3: 48 dBm @ 2500 MHz
• EVM < 3% @ 26.5 dBm Pout, WiMAX (802.16e)
• Active Bias Control (adjustable externally)
• Single 3 to 5 Volt Supply
• Single--ended Power Detector
• Cost--effective QFN Surface Mount Package
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.

Part Name(s) : MMZ25332B MMZ25332BT1
NXP
NXP Semiconductors.
Description : Heterojunction Bipolar Transistor Technology (InGaP HBT)

1500–2800 MHz, 26.5 dB 33 dBm, 5.8 NF InGaP HBT LINEAR AMPLIFIER

The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 22 dBm, covering frequencies from 1500 to 2800 MHz. It operates from a supply voltage of 3 to 5 V. The amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost--effective, surface mount QFN 3 × 3 package. The device offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance.

• Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 mA

Features
• Frequency: 1500–2800 MHz
• P1dB: 33 dBm @ 2500 MHz
• Power Gain: 26.5 dB @ 2500 MHz
• OIP3: 48 dBm @ 2500 MHz
• EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)
• Active Bias Control (adjustable externally)
• Power Down Control via VBIAS Pin
• Class 3A HBM ESD Rating
• Single 3 to 5 V Supply
• Single--ended Power Detector
• Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package
• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

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