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Part Name(s) : LED34-HIGH-SMD5
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
Description : Mid-Infrared Light Emitting Diode, SMD

Mid-Infrared Light Emitting Diode, SMD

Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-High-SMD5 has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 5x5 mm

Part Name(s) : LED34-HIGH-SMD3
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
Description : Mid-Infrared Light Emitting Diode, SMD

Mid-Infrared Light Emitting Diode, SMD

Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-High-SMD3 has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 3x3 mm

Part Name(s) : LED34-HIGH-SMD5R
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
Description : Mid-Infrared Light Emitting Diode, SMD

Mid-Infrared Light Emitting Diode, SMD

Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-High-SMD5R has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 5x5 mm with microreflector

Part Name(s) : BAS21M3 BAV21WS
Gaomi Xinghe Electronics Co., Ltd.
Gaomi Xinghe Electronics Co., Ltd.
Description : High Voltage Switching Diode

High Voltage Switching Diode

◇ General purpose Diodes
High Voltage / Fast Switching devices
◇ SOD323F Thin SMD package (Fig-1)
◇ RoHS compliant / Green EMC
◇ Matte Tin (Sn) Lead finish
◇ Moisture Level Sensitivity 1
◇ Cathode Band / Device marking

Part Name(s) : CMSD2004S KMSD2004S
TY Semiconductor
TY Semiconductor
Description : High Voltage Switching Diode

High Voltage Switching Diode

Description : High Voltage Switching Diode

High Voltage Switching Diode

Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant

Part Name(s) : BAS21HT1
Leshan Radio Company
Leshan Radio Company
Description : High Voltage Switching Diode

High Voltage Switching Diode

Part Name(s) : SDS19WKF
Kodenshi Auk Co., LTD
Kodenshi Auk Co., LTD
Description : High Voltage Switching Diode

General Description
Dual general-purpose Switching Diodes, fabricated in planar technology, and packaged in small SOT-23F surface mounted device (SMD) packages.

Features and Benefits
• Silicon epitaxial planar Diode
High Switching speed
• Low forward drop Voltage and low leakage current
• “Green” device and RoHS compliant device
• Available in full lead (Pb)-free device

Applications
• Ultra High speed Switching application

Part Name(s) : SDS20WM
Kodenshi Auk Co., LTD
Kodenshi Auk Co., LTD
Description : High Voltage Switching Diode

General Description
Dual general-purpose Switching Diodes, fabricated in planar technology, and packaged in small SOT-23 surface mounted device (SMD) packages.

Features and Benefits
• Silicon epitaxial planar Diode
High Switching speed
• Low forward drop Voltage and low leakage current
• “Green” device and RoHS compliant device
• Available in full lead (Pb)-free device

Applications
• Ultra High speed Switching application

Part Name(s) : SDS20WMF
Kodenshi Auk Co., LTD
Kodenshi Auk Co., LTD
Description : High Voltage Switching Diode

General Description
Dual general-purpose Switching Diodes, fabricated in planar technology, and packaged in small SOT-23F surface mounted device (SMD) packages.

Features and Benefits
• Silicon epitaxial planar Diode
High Switching speed
• Low forward drop Voltage and low leakage current
• “Green” device and RoHS compliant device
• Available in full lead (Pb)-free device

Applications
• Ultra High speed Switching application

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