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Part Name(s) : ELM185
ELM
Elm Electronics
Description : Laser Diode Driver

■ General description
ELM185xB is a bipolar type laser Diode driver IC with internal APC circuit which consists of a reference Voltage source, an error amplifier, and a thermal shutdown circuit for protection. With reference Voltage source, the output of laser is comparatively stable during the change of power Voltage and temperature. With its small package, ELM185xB is possible to be assembled within small areas on the board. When control loop damage occurs, ELM185xB is also capable of limiting the laser drive current; limited current value can be adjusted by an external resister on ILM. KLD output drive current can reach up to 400mA (max.). For avoidance of damage of laser Diode, the Zener Diode which is included in ELM185xB is able to absorb 8V surge between VCC-GND. ELM185xB is able to drive various types of laser Diode modules (LDM); please refer to applicable laser Diode modules for further information. ELM185xB can not only drive laser Diode by APC control, but also by constant current with internal constant current setup function; therefore, ELM185xB can also be used as constant current driver for laser Diode, High luminous LED, etc.

■ Features
• Low Voltage operation : 2.0V
• Low current consumption operation : Typ.1mA
• Laser drive current : Max.400mA
• Internal Voltage reference : Typ.0.30V
• Thermal shutdown circuit : Typ.150°C
• Package : SOT-26, VSON6-2x2
• Zener Diode for surge absorption included

■ Application
• Driver for laser Diode in laser pointer, laser level, etc.
• Driver for constant load current such as LED, etc.

Description : Laser Diode Driver

■ General description
​​​​​​​ELM185xB is a bipolar type laser Diode driver IC with internal APC circuit which consists of a reference Voltage source, an error amplifier, and a thermal shutdown circuit for protection. With reference Voltage source, the output of laser is comparatively stable during the change of power Voltage and temperature. With its small package, ELM185xB is possible to be assembled within small areas on the board. When control loop damage occurs, ELM185xB is also capable of limiting the laser drive current; limited current value can be adjusted by an external resister on ILM. KLD output drive current can reach up to 400mA (max.). For avoidance of damage of laser Diode, the Zener Diode which is included in ELM185xB is able to absorb 8V surge between VCC-GND. ELM185xB is able to drive various types of laser Diode modules (LDM); please refer to applicable laser Diode modules for further information. ELM185xB can not only drive laser Diode by APC control, but also by constant current with internal constant current setup function; therefore, ELM185xB can also be used as constant current driver for laser Diode, High luminous LED, etc.

■ Features
• Low Voltage operation : 2.0V
• Low current consumption operation : Typ.1mA
• Laser drive current : Max.400mA
• Internal Voltage reference : Typ.0.30V
• Thermal shutdown circuit : Typ.150°C
• Package : SOT-26, VSON6-2x2
• Zener Diode for surge absorption included

■ Application
• Driver for laser Diode in laser pointer, laser level, etc.
• Driver for constant load current such as LED, etc.

Part Name(s) : BULD125KC
Transys-Electronics
Transys Electronics Limited
Description : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of Switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a Voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

Part Name(s) : BULD125KC
POINN
Power Innovations Ltd
Description : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of Switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a Voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

Part Name(s) : BULD85 BULD85KC
POINN
Power Innovations Ltd
Description : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of Switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a Voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

 

Part Name(s) : BULD125KC
TRSYS
Transys Electronics Limited
Description : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of Switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a Voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

Part Name(s) : BULD85 BULD85KC
Power-Innovations
Power Innovations
Description : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of Switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a Voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

 

Part Name(s) : BULD85KC
Transys-Electronics
Transys Electronics Limited
Description : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of Switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a Voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

 

Part Name(s) : BULD125 BULD125KC
Power-Innovations
Power Innovations
Description : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of Switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a Voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

Part Name(s) : BULD125KC BULD125
Transys
Transys Electronics
Description : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of Switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a Voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

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