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Part Name(s) : ML976H10 ML9XX10
Mitsubishi
MITSUBISHI ELECTRIC
Description : InGaAsP-MQW HIGH POWER LASER DIODES

DESCRIPTION
ML9XX10 series are InGaAsP HIGH POWER LASER DIODES which provide a stable, single transverse mode oscillation with emission wavelength of 1550nm and pulse light output of 200mW.

Applications
   OTDR systems

Part Name(s) : ML776H10 ML7XX10
Mitsubishi
MITSUBISHI ELECTRIC
Description : InGaAsP-MQW HIGH POWER LASER DIODES

DESCRIPTION
ML7XX10 series are InGaAsP HIGH POWER LASER DIODES which provide a stable, single transverse mode oscillation with emission wavelength of 1310nm and pulse light output of 300mW.

Applications
   OTDR systems

Part Name(s) : ML774H11F
Mitsubishi
MITSUBISHI ELECTRIC
Description : InGaAsP-MQW-DFB LASER DIODES

DESCRIPTION
ML7XX11 series are MQW*-DFB** LASER DIODES emitting light beam around 1310nm.
They are well suited for light source in long distance digital transmission systems.
The ML776H11F are hermetically sealed devices having the photodiode for optical output monitoring.

   * MQW : Multiple Quantum Well
   ** DFB : Distributed Feedback

Part Name(s) : ML976H11F
Mitsubishi
MITSUBISHI ELECTRIC
Description : InGaAsP-MQW-DFB LASER DIODES

DESCRIPTION
ML9XX11 series are MQW*-DFB** LASER DIODES emitting light beam around 1550nm.
They are well suited for light source in long distance digital transmission systems.
The ML976H11F are hermetically sealed device having the photodiode for optical output monitoring.
   * MQW : Multiple Quantum Well
   ** DFB : Distributed Feedback

APPLICATIONS
   Wide temperature range digital transmission system

Part Name(s) : ML961B8S ML976H6F
Mitsubishi
MITSUBISHI ELECTRIC
Description : InGaAsP-MQW-FP LASER DIODES

DESCRIPTION
ML9XX6 series are InGaAsP LASER DIODES whhich provides a stable, single transverse mode oscillation with emission wavelength of 1550nm and standard continuous light output of 5mW.

APPLICATION
 Long-distance optical communication system

Mitsubishi
MITSUBISHI ELECTRIC
Description : InGaAsP-MQW-DFB LASER DIODES

DESCRIPTION
ML7XX11 series are MQW*-DFB** LASER DIODES emitting light beam around 1310nm.
They are well suited for light source in long distance digital transmission systems.
The ML776H11F are hermetically sealed device having the photodiode for optical output monitoring.
   * MQW : Multiple Quantum Well
   ** DFB : Distributed Feedback

APPLICATIONS
   Wide temperature range digital transmission system

Part Name(s) : ML99212 ML9XX12
Mitsubishi
MITSUBISHI ELECTRIC
Description : InGaAsP-MQW-DFB LASER DIODES

DESCRIPTION
ML9XX12 series are MQW**-DFB** LASER DIODES emitting light beam around 1550nm.
They are well suited for light source in longdistance digital transmission systems.
The ML99212 are specially designed for fiber modules and mount on flat open packages.
Rear output can be used for automatic POWER control of the LASER.

APPLICATION
   Long-distance (100km)/HIGH bit-rate (2.5Gb/s) digital transmission system

Mitsubishi
MITSUBISHI ELECTRIC
Description : InGaAsP-MQW-FP LASER DIODES 

DESCRIPTION
ML9XX6 series are InGaAsP LASER DIODES which provides a stable, single transverse mode oscillation with emission wavelength of 1550nm and standard continuous light output of 5mW.
ML9XX6 are hermetically sealed devices having the photodiode for optical output monitoring. This HIGH-performance, HIGH reliability, and long-life LASER diode is suitable for such applications as the light sources for long-distance optical communication systems.

APPLICATION
   Long-distance optical communication systems

Description : InGaAsP-MQW-FP LASER DIODES

DESCRIPTION
ML7XX8 series are InGaAsP LASER DIODES which provides a stable, single transverse mode oscillation with emission wavelength of 1310nm and standard continuous light output of 10mW.
ML7XX8 are hermetically sealed devices having the photodiode for optical output monitoring. This HIGH-performance, HIGH reliability, and long-life LASER diode is suitable for such applications as the light sources for long-distance optical communication systems.

APPLICATIONS
   Optical communication system

NEC
NEC => Renesas Technology
Description : 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION
The NX7460LE is a 1 480 nm pumping LASER diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH LASER diode that features HIGH output POWER, HIGH efficiency, and stable fundamental mode.

FEATURES
• InGaAsP strained MQW DC-PBH LASER diode
HIGH output POWER Pf = 120 mW MIN. @ IF = 550 mA CW
• Internal optical isolator, thermoelectric cooler and InGaAs monitor photo diode
• Hermetically sealed 14-pin butterfly package
• Single mode fiber pigtail
• Wide operating temperature range TC = 0 to +65 °C

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