Qdatasheet_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Searchword :
Description : MUAD "Harmony" 2M and 1M Ternary CAMs

GENERAL DESCRIPTION
The MUAD "Harmony" Ternary CAM is a fast look-up table device supporting Ternary (0, 1, don’t care) elements for networking and communication applications. Harmony is a member of MUSIC Semiconductors RouteCAM family.
The organization of the Harmony 2M part is 16K x 136 bits, and the 1M part is 8K x 136-bit wide, with double-word and half-word options.

FEATURES
• 16K and 8K x 136-bit full Ternary CAMs
• Configurable as 8K/4K x 272 or 32K/16K x 68
• 68-bit interface operates at 13.6Gbit/sec
• Sustains 100 million searches per second on a 68-bit or 136-bit field
• 50 million searches per second in 272-bit configuration
• Holds multiple word widths within the same device
• Synchronous pipelined operation
• Up to eight CAMs cascadable without performance degradation or additional logic
• Glueless interface to industry-standard synchronous SRAMs
• Supports IEEE 1149.1 Test Access
• 1.8 and 3.3V power supply
• 272-pin BGA package

Sharp
Sharp Electronics
Description : Flash Memory 16M (1M × 16/2M × 8)

Flash Memory 16M (1M × 16/2M × 8)

Macronix
Macronix International
Description : 16M-BIT [2M x 8/1M x 16] CMOS OTP ROM

GENERAL DESCRIPTION
The MX27C1610 is a 16M-bit, One Time Programmable Read Only Memory. It is organized as 2M x 8 or 1M x 16 and has a static standby mode, and features fast programming. For programming outside from the system, existing EPROM programmers may be used. The MX27C1610 supports a intelligent fast programming algorithm which can result in programming time of less than two minutes.

FEATURES
• 2M x 8 or 1M x 16 organization
• 5V Vcc for Read operation
• 10V Vpp Programming operation
• Fast access time: 100/120 ns
• Totally static operation
• Completely TTL compatible
• Operating current: 60mA
• Standby current: 100uA
• Package type:
    - 42 pin plastic DIP

MCNIX
Macronix International
Description : 16M-BIT [2M x 8/1M x 16] CMOS OTP ROM

GENERAL DESCRIPTION
The MX27C1610 is a 16M-bit, One Time Programmable Read Only Memory. It is organized as 2M x 8 or 1M x 16 and has a static standby mode, and features fast programming. For programming outside from the system, existing EPROM programmers may be used. The MX27C1610 supports a intelligent fast programming algorithm which can result in programming time of less than two minutes.

FEATURES
• 2M x 8 or 1M x 16 organization
• 5V Vcc for Read operation
• 10V Vpp Programming operation
• Fast access time: 100/120 ns
• Totally static operation
• Completely TTL compatible
• Operating current: 60mA
• Standby current: 100uA
• Package type:
    - 42 pin plastic DIP

Part Name(s) : XAPA2100
ETC
Unspecified
Description : Harmony XAP

[Schneider]

Main
    Range of product Harmony XAP
    Product or component type Empty control station without hinges
    Device short name XAPA
    Product front plate size 85 x 226 mm
    Usable depth 3.27 in (83 mm)
    Number of cut-out Undrilled
    Colour of base of enclosure Grey
    Colour of cover Grey
    Material Glass reinforced polyester
    Cable entry Undrilled
    Device mounting Flush

Part Name(s) : MX29F1615
MCNIX
Macronix International
Description : 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

GENERAL DESCRIPTION
The MX29F1615 is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. MXICs Flash memories offer the most cost-effective and reliable read/ write non-volatile random access memory. The MX29F1615 is packaged in 42-pin PDIP. It is designed to be reprogrammed and in standard EPROM programmers.

FEATURES
• 5V ± 10% write and erase
• JEDEC-standard EEPROM commands
• Endurance:100 cycles
• Fast access time: 90/100/120ns
• Auto Erase and Auto Program Algorithms
    - Automatically erases the whole chip
    - Automatically programs and verifies data at specified addresses
• Status Register feature for detection of program or erase cycle completion
• Low VCC write inhibit is equal to or less than 3.2V
• Software and hardware data protection
• Page program operation
    - Internal address and data latches for 64 words per page
    - Page programming time: 0.9ms typical
• Low power dissipation
    - 30mA typical active current
    - 1uA typical standby current
• CMOS and TTL compatible inputs and outputs
• Package Type:
    - 42 lead PDIP

Part Name(s) : MX29F1615
Macronix
Macronix International
Description : 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

GENERAL DESCRIPTION
The MX29F1615 is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. MXICs Flash memories offer the most cost-effective and reliable read/ write non-volatile random access memory. The MX29F1615 is packaged in 42-pin PDIP. It is designed to be reprogrammed and in standard EPROM programmers.

FEATURES
• 5V ± 10% write and erase
• JEDEC-standard EEPROM commands
• Endurance:100 cycles
• Fast access time: 90/100/120ns
• Auto Erase and Auto Program Algorithms
    - Automatically erases the whole chip
    - Automatically programs and verifies data at specified addresses
• Status Register feature for detection of program or erase cycle completion
• Low VCC write inhibit is equal to or less than 3.2V
• Software and hardware data protection
• Page program operation
    - Internal address and data latches for 64 words per page
    - Page programming time: 0.9ms typical
• Low power dissipation
    - 30mA typical active current
    - 1uA typical standby current
• CMOS and TTL compatible inputs and outputs
• Package Type:
    - 42 lead PDIP

Description : 3.3V 2M × 8/1M × 16 CMOS synchronous DRAM

Functional description
The AS4LC2M8S1 and AS4LC1M16S1 are high-performance 16-megabit CMOS Synchronous Dynamic Random Access Memory (SDRAM) devices organized as 1,048,576 words × 8 bits × 2 banks (2048 rows × 512 columns) and 524,288 words × 16 bits × 2 banks (2048 rows × 256 columns), respectively. Very high bandwidth is achieved using a pipelined architecture where all inputs and outputs are referenced to the rising edge of a common clock. Programmable burst mode can be used to read up to a full page of data (512 bytes for 2M × 8 and 256 bytes for 1M × 16) without selecting a new column address.

Features
• Organization
    - 1,048,576 words × 8 bits × 2 banks (2M × 8) 11 row, 9 column address
    - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row,8 column address
• All signals referenced to positive edge of clock, fully synchronous
• Dual internal banks controlled by A11 (bank select)
• High speed
    - 143/125/100 MHz
    - 7/8/10 ns clock access time
• Low power consumption
    - Active: 576 mW max
    - Standby: 7.2 mW max, CMOS I/O
• 2048 refresh cycles, 64 ms refresh interval
• Auto refresh and self refresh (2K self refresh mode at 64 ms)
• PC100 functionality
• Automatic and direct precharge including concurrent autoprecharge
• Burst read, write/Single write
• Random column address assertion in every cycle, pipelined operation
• LVTTL compatible I/O
• 3.3V power supply
• JEDEC standard package, pinout and function
    - 400 mil, 44-pin TSOP II (2M × 8)
    - 400 mil, 50-pin TSOP II (1M × 16)
• Read/write data masking
• Programmable burst length (1/2/4/8/ full page)
• Programmable burst sequence (sequential/interleaved)
• Programmable CAS latency (1/2/3)

Description : 2M x 36/4M x 18/1M x 72 Flow-through SRAM

2M x 36/4M x 18/1M x 72 Flow-through SRAM

Part Name(s) : LRS1329
Sharp
Sharp Electronics
Description : Stacked Chip 16M Flash and 2M SRAM

Description
The LRS1329 is a combination memory organized as 1M x16/2M x8 bit flash memory and 256K x8 bit static in one package.

12345678910 Next


All Rights Reserved © qdatasheet.com [ Privacy Policy ] [ Contact Us ]