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Description : N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNEL ENHANCEMENT MODE POWER MOS field effect TRANSISTORS. Easy drive and very fast switching times make these POWER MOS TRANSISTORS ideal for high speed switching applications.

• HIGH VOLTAGE - FOR OFF LINE APPLICATIONS
• ULTRA FAST SWITCHING
• EASY DRIVE - FOR REDUCED COST AND SIZE

INDUSTRIAL APPLICATIONS:
• ELECTRONIC LAMP BALLAST
• DC SWITCH

Part Name(s) : BSS91
Philips
Philips Electronics
Description : N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE vertical D-MOS transistor in a TO-18 envelope, Designed primarily as a line current interrupter in elephone sets, it can also be applied in other applications such as in relays, line and high-speed transformer drivers etc.

Features
● Direct interface to C-MOS, TTL, etc.
● High-speed switching
● No secondary breakdown.

TTELEC
TT Electronics.
Description : N-CHANNEL ENHANCEMENT MODE MOS Transistor

Description:
The HCT7000M is a high performance ENHANCEMENT MODE N‐CHANNEL MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characterisƟcs are similar to those of the JEDEC 2N7000. The pin‐out and footprint matches that of MOSt ENHANCEMENT MODE MOS TRANSISTORS built in SOT23 plasƟc packages.

Features:
• 200 mA ID
• Ultra small surface mount package
• RDS(ON) < 5Ω
• Pin-out compatible with MOSt SOT23 MOSFETS

Applications:
• Switching applications: small servo motor control, POWER MOSFET gate drives
• Relay Drivers
• High Speed Line Drivers
POWER Supplies

ETC
Unspecified
Description : N-CHANNEL ENHANCEMENT MODE MOS Transistor

[Optek Technology, Inc.]

Description
The HCT7000M is a high performance ENHANCEMENT MODE N-CHANNEL MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of MOSt ENHANCEMENT MODE MOS TRANSISTORS built in SOT23 plastic packages. 

Features
• 200mA ID
• Ultra small surface mount package
• RDS(ON) < 5W
• Pin-out compatible with MOSt SOT23 MOSFETS

Description : P-CHANNEL ENHANCEMENT-MODEVertical DMOS FETs,N-Chanel ENHANCEMENT-MODE Vertical DMOS FET

Advanced DMOS Technology
These ENHANCEMENT-MODE (normally-off) TRANSISTORS utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the POWER handling capabilities of bipolar TRANSISTORS and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Features
Free from secondary breakdown
Low POWER drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-CHANNEL devices

Part Name(s) : TPC8405
Toshiba
Toshiba
Description : TOSHIBA Field Effect Transistor Silicon N, P CHANNEL MOS Type (P CHANNEL U−MOS IV/N CHANNEL U-MOS III)

Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PC Applications

• Low drain-source ON resistance : P CHANNEL RDS (ON) = 25 mΩ (typ.)
                                                         N CHANNEL RDS (ON) = 20 mΩ (typ.)
• High forward transfer admittance : P CHANNEL |Yfs| = 12S (typ.)
                                                         N CHANNEL |Yfs| = 14S (typ.)
• Low leakage current : P CHANNEL IDSS = −10 μA (VDS = −30 V)
                                      N CHANNEL IDSS = 10 μA (VDS = 30 V)
ENHANCEMENT-MODE
   : P CHANNEL Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
     N CHANNEL Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Description : N-CHANNEL ENHANCEMENT-MODE Vertical DMOS FETs

Advanced DMOS Technology
These ENHANCEMENT-MODE (normally-off) TRANSISTORS utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the POWER handling capabilities of bipolar TRANSISTORS and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Features
❏ Free from secondary breakdown
❏ Low POWER drive requirement
❏ Ease of paralleling
❏ Low CISS and fast switching speeds
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-CHANNEL devices

Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
POWER supply circuits
❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar TRANSISTORS, etc.)

Supertex
Supertex Inc
Description : N-CHANNEL ENHANCEMENT-MODE Vertical DMOS FETs

Advanced DMOS Technology
These ENHANCEMENT-MODE (normally-off) TRANSISTORS utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the POWER handling capabilities of bipolar TRANSISTORS and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Features
❏ Free from secondary breakdown
❏ Low POWER drive requirement
❏ Ease of paralleling
❏ Low CISS and fast switching speeds
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-CHANNEL devices

Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
POWER supply circuits
❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar TRANSISTORS, etc.)

 

Supertex
Supertex Inc
Description : P-CHANNEL ENHANCEMENT-MODE Vertical DMOS FETs

These ENHANCEMENT-MODE (normally-off) TRANSISTORS utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the POWER handling capabilities of bipolar TRANSISTORS and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown.

Features
❏ Free from secondary breakdown
❏ Low POWER drive requirement
❏ Ease of paralleling
❏ Low CISSand fast switching speeds
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-CHANNEL devices

Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
POWER supply circuits
❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar TRANSISTORS, etc.)

Part Name(s) : VN3515L VN4012L
Supertex
Supertex Inc
Description : N-CHANNEL ENHANCEMENT-MODE Vertical DMOS FETs

Advanced DMOS Technology
These ENHANCEMENT-MODE (normally-off) TRANSISTORS utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the POWER handling capabilities of bipolar TRANSISTORS and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Features
❏ Free from secondary breakdown
❏ Low POWER drive requirement
❏ Ease of paralleling
❏ Low CISS and fast switching speeds
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-CHANNEL devices

Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Telecom Switching
POWER supply circuits
❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar TRANSISTORS, etc.)

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