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STMicroelectronics
DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capability with higher ruggedness performance as request ed by a large variety of single-switch applications.
■ TYPICAL RDS(on) = 2.1Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ GATE-TO-SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
STMicroelectronics
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products
General features
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeability
Applications
■ Switching application
STMicroelectronics
DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
■ TYPICAL RDS(on) = 1.55Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ GATE-TO-SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
New Jersey Semiconductor
N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET
■ TYPICAL Ros(on) = 0.65 Q
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIE
STMicroelectronics
DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
■ TYPICAL RDS(on) = 1.1 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
STMicroelectronics
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak en to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs in cluding revolutionary MDmesh™ products.
■ TYPICAL RDS(on) = 0.40Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES
STMicroelectronics
DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
■ TYPICAL RDS(on) = 1.5Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ GATE-TO-SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
STMicroelectronics
The third generation of MESH OVERLAY Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
TYPICAL RDS(on) = 0.82Ω
EXTREMELY HIGH dv/dt CAPABILITY
GATE-TO-SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
STMicroelectronics
DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
■ TYPICAL RDS(on) = 3.2Ω
■ EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW GATE INPUT RESISTANCE
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
STMicroelectronics
DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
■ TYPICAL RDS(on) = 0.9 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
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