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Part Name(s) : STW75NF30 75NF30
ST-Microelectronics
STMicroelectronics
Description : N-channel 300 V, 0.037 Ω, 60 A, TO-247 low gate charge STripFET™ Power MOSFET

Description
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters

Features
■ Exceptional dv/dt capability
low gate charge
■ 100% Avalanche tested

Application
■ Switching applications

ST-Microelectronics
STMicroelectronics
Description : N-channel 200V - 0.028Ω- 75A - D2PAK - TO-220 - TO-247 low gate charge STripFET™ Power MOSFET

Description
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters

■ Exceptional dv/dt capability
low gate charge
■ 100% Avalanche tested

Applications
■ Switching application

Part Name(s) : STW80NF10
ST-Microelectronics
STMicroelectronics
Description : N-channel 100V - 0.012Ω - 80A TO-247 low gate charge STripFET™ POWER MOSFET

DESCRIPTION
This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

■ TYPICAL RDS(on) = 0.012Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL

Description : N-channel 200V - 0.028Ω- 75A - D2PAK - TO-220 - TO-247 low gate charge STripFET™ Power MOSFET

Description
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters

■ Exceptional dv/dt capability
low gate charge
■ 100% Avalanche tested

ST-Microelectronics
STMicroelectronics
Description : N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK low gate charge STripFET™ Power MOSFET

Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters.

Features
gate charge minimized
■ 100% avalanche tested
■ Excellent figure of merit (RDS*Qg)
■ Very good manufactuing repeability
■ Very low intrinsic capacitances

Application
■ Switching applications

ST-Microelectronics
STMicroelectronics
Description : N-channel 200V - 0.038Ω-40A- D2PAK/TO-220/TO-220FP/TO-247 low gate charge STripFET™ Power MOSFET

Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters.

gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
■ Excellent figure of merit (RDS*Qg)
■ 100% avalanche tested

Applications
■ Switching application

Description : N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 low gate charge STripFET™ Power MOSFET

DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.

■ TYPICAL RDS(on) = 0.038 Ω
gate charge MINIMIZED
■ VERY low INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
■ EXCELLENT FIGURE OF MERIT (RDS*Qg)
■ 100% AVALANCHE TESTED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ UPS

ST-Microelectronics
STMicroelectronics
Description : N-channel 120V - 0.16Ω- 14A - TO-220/TO-220FP low gate charge STripFET™ II Power MOSFET

Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements

■ Exceptional dv/dt capability
■ Application oriented characterization

Part Name(s) : P40NF10L STP40NF10L
ST-Microelectronics
STMicroelectronics
Description : N-channel 100V - 0.028Ω - 40A TO-220 low gate charge STripFET™ POWER MOSFET

DESCRIPTION
This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifical
ly been designed to minimize input capacitance and gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

■ TYPICAL RDS(on) = 0.028Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED CHARACTERIZATION

Part Name(s) : P40NF12 STP40NF12
ST-Microelectronics
STMicroelectronics
Description : N-channel 120V - 0.028Ω -40ATO-220 low gate charge STripFET™ II POWER MOSFET

Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization

Applications
■ Switching application

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