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ST-Microelectronics
STMicroelectronics
Description : N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Pluslow Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

Description
These FDmesh II Pluslow Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Pluslow Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Features
• Extremely low gate charge and input capacitance
lower RDS(on) x area vs previous generation
low gate input resistance
• 100% avalanche tested
• Zener-protected
• Extremely high dv/dt and avalanche capabilities

Applications
• Switching applications

Part Name(s) : STF24N60M2 STFI24N60M2
ST-Microelectronics
STMicroelectronics
Description : N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Pluslow Qg Power MOSFET in TO-220FP and I2PAKFP packages

Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Pluslow Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features
• Extremely low gate charge
lower RDS(on) x area vs previous generation
low gate input resistance
• 100% avalanche tested
• Zener-protected

Applications
• Switching applications
• LLC converters, resonant converters

Part Name(s) : STF13N60M2 STFI13N60M2
ST-Microelectronics
STMicroelectronics
Description : N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Pluslow Qg Power MOSFETs in TO-220FP and I2PAKFP packages

Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Pluslow Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features
• Extremely low gate charge
lower RDS(on) x area vs previous generation
low gate input resistance
• 100% avalanche tested
• Zener-protected

Applications
• Switching applications

ST-Microelectronics
STMicroelectronics
Description : N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Pluslow Qg Power MOSFETs in TO-220, IPAK and TO-247 packages

Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Pluslow Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features
• Extremely low gate charge
lower RDS(on) x area vs previous generation
low gate input resistance
• 100% avalanche tested
• Zener-protected

Applications
• Switching applications

ST-Microelectronics
STMicroelectronics
Description : N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Pluslow Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages

Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Pluslow Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features
• Extremely low gate charge
lower RDS(on) x area vs previous generation
low gate input resistance
• 100% avalanche tested
• Zener-protected

Applications
• Switching applications
• LLC converters, resonant converters

Part Name(s) : STB6N60M2 STD6N60M2
ST-Microelectronics
STMicroelectronics
Description : N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Pluslow Qg Power MOSFET in D2PAK and DPAK packages

Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Pluslow Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features
• Extremely low gate charge
lower RDS(on) x area vs previous generation
low gate input resistance
• 100% avalanche tested
• Zener-protected

Applications
• Switching applications

Part Name(s) : 22NM60ND STF22NM60ND
ST-Microelectronics
STMicroelectronics
Description : Automotive-grade N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET in a TO-220FP package

Description
This FDmesh™ II Power MOSFET with fastrecovery body diode is produced using MDmesh™ II technology. Utilizing a new striplayout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.

Features
• Designed for automotive applications and AEC-Q101 qualified
• Fast-recovery body diode
low gate charge and input capacitance
low on-resistance
• 100% avalanche tested
• High dv/dt ruggedness

Applications
• Switching applications

Part Name(s) : STL13N60M2 13N60M2
ST-Microelectronics
STMicroelectronics
Description : N-channel 600 V, 0.39 Ω typ., 7 A MDmesh II Pluslow Qg Power MOSFET in a PowerFLAT™ 5x6 HV package

Description
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Pluslow Qg. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features
• Extremely low gate charge
lower RDS(on) x area vs previous generation
low gate input resistance
• 100% avalanche tested
• Zener-protected

Applications
• Switching applications

ST-Microelectronics
STMicroelectronics
Description : N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Pluslow Qg Power MOSFETs in TO-220FP and I2PAKFP packages

Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Pluslow Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features
• Extremely low gate charge
lower RDS(on) x area vs previous generation
low gate input resistance
• 100% avalanche tested
• Zener-protected

Applications
• Switching applications

ST-Microelectronics
STMicroelectronics
Description : N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Pluslow Qg Power MOSFET in DPAK, TO-220 and IPAK packages

Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Pluslow Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features
• Extremely low gate charge
lower RDS(on) x area vs previous generation
low gate input resistance
• 100% avalanche tested
• Zener-protected

Applications
• Switching applications

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