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STMicroelectronics
Description
These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Features
• Extremely low gate charge and input capacitance
• lower RDS(on) x area vs previous generation
• low gate input resistance
• 100% avalanche tested
• Zener-protected
• Extremely high dv/dt and avalanche capabilities
Applications
• Switching applications
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Features
• Extremely low gate charge
• lower RDS(on) x area vs previous generation
• low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC converters, resonant converters
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Features
• Extremely low gate charge
• lower RDS(on) x area vs previous generation
• low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Features
• Extremely low gate charge
• lower RDS(on) x area vs previous generation
• low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Features
• Extremely low gate charge
• lower RDS(on) x area vs previous generation
• low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC converters, resonant converters
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Features
• Extremely low gate charge
• lower RDS(on) x area vs previous generation
• low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
STMicroelectronics
Description
This FDmesh™ II Power MOSFET with fastrecovery body diode is produced using MDmesh™ II technology. Utilizing a new striplayout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
Features
• Designed for automotive applications and AEC-Q101 qualified
• Fast-recovery body diode
• low gate charge and input capacitance
• low on-resistance
• 100% avalanche tested
• High dv/dt ruggedness
Applications
• Switching applications
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
• Extremely low gate charge
• lower RDS(on) x area vs previous generation
• low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Features
• Extremely low gate charge
• lower RDS(on) x area vs previous generation
• low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Features
• Extremely low gate charge
• lower RDS(on) x area vs previous generation
• low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
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