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Description : Radiation Hardened Ultra High Frequency NPN/PNP transistor Arrays

Radiation Hardened Ultra High Frequency NPN/PNP transistor Arrays

The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The ISL73096RH consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127RH consists of five NPN transistors on a common substrate. The ISL73128RH consists of five PNP transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment.

Features
• Electrically Screened to SMD # 5962-07218
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
   - Gamma Dose (γ) . . . . . . . . . . 3 x 105RAD(Si)
   - SEL Immune . . Bonded Wafer Dielectric Isolation
NPN Gain Bandwidth Product (FT) . . . 8GHz (Typ)
NPN Current Gain (hFE). . . . . . . . . . . . 130 (Typ)
NPN Early Voltage (VA) . . . . . . . . . . . . 50V (Typ)
• PNP Gain Bandwidth Product (FT) . . . 5.5GHz (Typ)
• PNP Current Gain (hFE) . . . . . . . . . . . . . 60 (Typ)
• PNP Early Voltage (VA) . . . . . . . . . . . . 20V (Typ)
• Noise Figure (50Ω) at 1GHz . . . . . . . . 3.5dB (Typ)
• Collector-to-Collector Leakage . . . . . . <1pA (Typ)
• Complete Isolation Between transistors

Applications
• High Frequency Amplifiers and Mixers
   - Refer to Application Note AN1503
• High Frequency Converters
• Synchronous Detector

Description : Low-Noise Matched transistor Array ICs

Description
The THAT 300, 320 and 340 are large geometry, 4-transistor, monolithic NPN and/or PNP arrays. They exhibit both high speed and low noise, with excellent parameter matching between transistors of the same gender. Typical base-spreading resistance is 25 Ω for the PNP devices (30 Ω for the low-gain NPNs), so their resulting voltage noise is under 1 nV/√Hz. This makes the 300 series ideally suited for low-noise amplifier input stages, log amplifiers, and many other applications. The four-NPN transistor array is available in versions selected for hfe with minimums of 150 (300A) or 300 (300B).

FEATURES
• 4 Matched NPN transistors
    º 300 typical hfe of 100
    º 300A minimum hfe of 150
    º 300B minimum hfe of 300
• 4 Matched PNP transistors
    º 320 typical hfe of 75
• 2 Matched PNP and 2 Matched NPN transistors
    º 340 PNP typical hfe of 75
    º 340 NPN typical hfe of 100
• Low Voltage Noise
    º 0.75 nV/ √Hz (PNP)
    º 0.8 nV/ √Hz (NPN)
• High Speed
    º fT = 350 MHz (NPN)
    º fT = 325 MHz (PNP)
• 500 μV matching between devices
• Dielectrically Isolated for low crosstalk and high DC isolation
• 36V VCEO

APPLICATIONS
• Low Noise Front Ends
• Microphone Preamplifiers
• Log/Antilog Amplifiers
• Current Sources
• Current Mirrors
• Multipliers

Toshiba
Toshiba
Description : TOSHIBA Multi-Chip transistor Silicon NPN Epitaxial Type, Field Effect transistor Silicon N Channel MOS Type

STROBE FLASH APPLICATIONS
HIGH-SPEED SWITCHING APPLICATIONS
DC-DC CONVERTER APPLICATIONS

• Multi-chip discrete device; built-in NPN transistor for main switch and
   N-ch MOS FET for drive
• High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (NPN transistor)
• Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)
   (NPN transistor)
• High-speed switching: tf = 25 ns (typ.) (NPN transistor)

Part Name(s) : 8H01 TPCP8H01
Toshiba
Toshiba
Description : Silicon NPN Epitaxial Type, Field Effect transistor Silicon N Channel MOS Type Multi-Chip transistor

HIGH-SPEED SWITCHING APPLICATIONS
LORD SWITCHING APPLICATIONS
STROBE FLASH APPLICATIONS

• Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive
• High DC current gain: hFE = 250 to 400 (IC = 0.5 A) (NPN transistor)
• Low collector-emitter saturation voltage: VCE (sat) = 0.13 V (max)
                                                      (NPN transistor)
• High-speed switching: tf = 25 ns (typ.) (NPN transistor)

Description : Ultra High Frequency transistor Arrays

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.

Features
NPN transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . 130
NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V
• PNP transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
• PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 60
• PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 20V
• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
• Collector-to-Collector Leakage. . . . . . . . . . . . . . . . . <1pA
• Complete Isolation Between transistors
• Pin Compatible with Industry Standard 3XXX Series
   Arrays

Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors

Description : Ultra High Frequency transistor Arrays

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.

Features
NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 130
NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V
• PNP transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
• PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . 60
• PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . .20V
• Noise Figure (50) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
• Collector to Collector Leakage . . . . . . . . . . . . . . . . . .<1pA
• Complete Isolation Between transistors
• Pin Compatible with Industry Standard 3XXX Series
   Arrays
• Pb-Free (RoHS Compliant)

Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors

Part Name(s) : BUX81
Semelab
Semelab - > TT Electronics plc
Description : HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR transistor

HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR transistor

Applications
The BUX81 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and high switching speed.
This device is especially suitable for switching–control amplifiers, power gates, switching regulators, power-switch ing circuits converters, inverters and control circuits.Other recommended applications include DC–RF amplifiers and power oscillators.

 

Part Name(s) : BUX80
Semelab
Semelab - > TT Electronics plc
Description : HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR transistor

HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR transistor

Applications
    The BUX80 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and high switching speed.
    This device is especially suitable for switching–control amplifiers, power gates, switching regulators, power-switching circuits converters, inverters and control circuits.

Part Name(s) : BUV48A BUV48A
ST-Microelectronics
STMicroelectronics
Description : High voltage fast switching NPN power transistor

Description
The device is a multiepitaxial mesa NPN transistor mounted in TO-247 plastic package.
It is intended for switching and industrial applications from single and three-phase mains.

Features
NPN transistor
■ High voltage capability
■ High current capability
■ Fast switching speed

Applications
■ Switching mode power supplies
■ Flyback and forward single transistor low power convertes

Description : 50 V, 200 mA NPN general-purpose transistor/100 mA NPN resistor-equipped transistor

General description
NPN general-purpose transistor and NPN Resistor-Equipped transistor (RET) in one SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package.

Features
■ General-purpose transistor:
   ♦ 200 mA collector current IC
■ Resistor-equipped transistor:
   ♦ Built-in bias resistors
■ Simplifies circuit design
■ Reduces component count
■ Reduces pick and place costs
■ Very small SMD plastic package
■ AEC-Q101 qualified

Applications
■ Inverter and switches
■ Low-frequency amplifier
■ Driver stages

 

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