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Part Name(s) : UM9552 UM9552S
Microsemi Corporation
Microsemi Corporation
Description : PIN DIODE ATTENUATOR

Description
The UM9552 is a very long minority carrier lifetime (70 ms typical) PIN DIODE that has been developed for low HF or LF Band ATTENUATOR Applications. They have been evaluated for ATTENUATOR linearity and distortion characteristics in a Bridge Tee ATTENUATOR Circuit at 455 KHz (the common intermediate frequency for AM transmitters and receivers). When the UM9552’s are used as the two variable resistors in the Bridged Tee Circuit, the Third Order Intermodulation Products are below -60 dBc with 0 dBm input power over an attenuation range of 4 dB to 30 dB.
These thicker, longer lifetime PIN DIODEs exhibit a more linear forward biased resistance (RS) vs forward bias current (If) relationship, which greatly simplifies the design of the driver circuits that supply the bias currents over the specified attenuation range. This task is simplified if the low attenuation range is truncated and the few dB are compensated by commercially available, inexpensive 4 to 6 dB gain blocks.

Features
● Low Frequency ATTENUATOR
● HF/LF Band Operation
● Long Lifetime (70 ms typ.)
● Very Low Distortion (IP3 @ 455 KHz = < 60 dBm)

Part Name(s) : BXY44K Q62702-X148
Siemens AG
Siemens AG
Description : Silicon PIN DIODE

Silicon PIN DIODE

● Microwave ATTENUATOR DIODE
● Linear RF characteristic

Part Name(s) : BAP64Q
NXP Semiconductors.
NXP Semiconductors.
Description : Quad PIN DIODE ATTENUATOR

General description
Quad PIN DIODE in a SOT753 package.

Features and benefits
 4 PIN DIODEs in a SOT753 package
 300 kHz to 4 GHz
 High linearity
 Low insertion loss
 reduction in part count
 Low DIODE capacitance
 Low DIODE forward resistance

Applications
 RF ATTENUATORs
 Broadband system applications
 General purpose Voltage Controlled ATTENUATORs for high linearity applications

Part Name(s) : MI204
MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
Description : PIN DIODE

DESCRIPTION
The MI204 PIN DIODE is employing a high reliability glass construction, designed for RF small ATTENUATOR in VHF UHF.

FEATURES
● Long carrier lifetime
● Low distortion
● Large dynamic range

APPLICATIONS
   RF ATTENUATOR RF switching

Part Name(s) : 1N5719
New Jersey Semiconductor
New Jersey Semiconductor
Description : Silicon PIN DIODE

DESCRIPTION:
The1N5719 is a Silicon PIN DIODE Designed for General Purpose ATTENUATOR and Switching Applications from 100 MHz to 3 GHz.

Part Name(s) : BA887
Infineon Technologies
Infineon Technologies
Description : Silicon PIN DIODE

Silicon PIN DIODE

Preliminary Data
● RF switch, RF ATTENUATOR for frequencies above 10 MHz
● Very low IM distortion

Part Name(s) : AT-273-PIN AT-273-PIN
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solutions, Inc.
Description : Digital ATTENUATOR 32.0 dB, 2-Bit, TTL Driver, DC-2.0 GHz

Description
M/A-COMs AT-273-PIN is a GaAs FET digital ATTENUATOR with a 16.0 dB minimum step size and a 32 dB total attenuation range. This ATTENUATOR and integral TTL driver is in a hermetically sealed ceramic 16-lead surface mount package. The AT-273-PIN is ideally suited for use where accuracy, fast switching, very low power consumption and low intermodulation products are required. Typical applications include dynamic range setting in precision receiver circuits and other gain/leveling control circuits. Environmental screening is available. Contact the factory for information.

Features
• Attenuation: 16.0 dB Steps to 32 dB
• Low DC Power Consumption
• Hermetic Surface Mount Package
• Integral TTL Driver
• 50 ohm Impedance
• Temperature Stability: ±0.18 dB from -55°C to +85°C Typ.
• Tape and Reel Packaging Available
• Lead-Free CR-11 Package
• 260°C Reflow Compatible
• RoHS* Compliant

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solutions, Inc.
Description : GaAs SPDT Switch DC - 4 GHz

Description
M/A-COM’s SW-226/227/228-PIN are GaAs MMIC SPDT switches packaged in lead-free, surface mount CR-2 ceramic style packages. The SW-226- PIN is a terminated SPDT. The SW-227-PIN offers high isolation. The SW-228-PIN offers low insertion loss. This ceramic switch platform has a common footprint for all three designs. The CR-2 package is hermetically sealed, making these switches ideal for space, military radios, and other environmentally harsh applications.

Features
• Terminated (SW-226-PIN), High Isolation (SW-227-PIN), Low Loss (SW-228-PIN)
• Fast Switching Speed: 6 nS Typical
• Ultra Low DC Power Consumption
• Lead-Free 7-Lead Ceramic Package
• RoHS* Compliant and 260°C Reflow Compatible

Part Name(s) : 1N5719
Advanced Semiconductor
Advanced Semiconductor
Description : SILICON PIN DIODE

DESCRIPTION:
The1N5719 is a Silicon PIN DIODE Designed for General Purpose ATTENUATOR and Switching Applications from 100 MHz to 3 GHz.

Part Name(s) : 5082-3039
Advanced Semiconductor
Advanced Semiconductor
Description : SILICON PIN DIODE

DESCRIPTION:
TheASI 5082-3039 is a Silicon PIN DIODE Designed for General Purpose ATTENUATOR and Switching Applications from 100 MHz to 3 GHz.

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