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Part Name(s) : MBRS3200T3G
ON Semiconductor
ON Semiconductor
Description : Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 3.0 AMPERE 200 VOLTS

This device employs the Schottky Barrier principle in a large area metalïtoïsilicon power diode. Stateïofïtheïart geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.

Features
• Small Compact Surface Mountable Package with JïBend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very High Blocking Voltage ï 200 V
• 175°C Operating Junction Temperature
• GuardïRing for Stress Protection
• NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements: AECïQ101 Qualified and PPAP Capable
• All Packages are PbïFree*

Part Name(s) : BN1L3N
NEC => Renesas Technology
NEC => Renesas Technology
Description : COMPOUND TRANSISTOR

on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching

FEATURES
• On-chip bias resistor
   (R1 = 4.7 kΩ, R2 = 10 kΩ)
• Complementary transistor with BA1L3N

Part Name(s) : AN1L3N
NEC => Renesas Technology
NEC => Renesas Technology
Description : COMPOUND TRANSISTOR

on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching

FEATURES
• On-chip bias resistor
   (R1 = 4.7 kΩ, R2 = 10 kΩ)
• Complementary transistor with AA1L3N

Part Name(s) : PDTA143XE_99
Philips Electronics
Philips Electronics
Description : PNP resistor-equipped transistor

DESCRIPTION
PNP resistor-equipped transistor in an SC-75 (SOT416) plastic package.

FEATURES
• Built-in bias resistors R1 and R2 (typ. 4.7 kΩ and 10 kΩ respectively)
• Simplification of circuit design
• Reduces number of components and board space. 

APPLICATIONS
• Especially suitable for space reduction in interface and driver circuits
• Inverter circuit configurations without use of external resistors.

Part Name(s) : AN1L3M
NEC => Renesas Technology
NEC => Renesas Technology
Description : COMPOUND TRANSISTOR

on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching

FEATURES
• On-chip bias resistor
   (R1 = 4.7 kΩ, R2 = 4.7 kΩ)
• Complementary transistor with AA1L3M

Part Name(s) : BN1L3M
NEC => Renesas Technology
NEC => Renesas Technology
Description : COMPOUND TRANSISTOR

on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching

FEATURES
• On-chip bias resistor
   (R1 = 4.7 kΩ, R2 = 4.7 kΩ)
• Complementary transistor with BA1L3M

Part Name(s) : BCR562
Infineon Technologies
Infineon Technologies
Description : PNP Silicon Digital Transistor (Rev - 2007)

PNP Silicon Digital Transistor

• Built in bias resistor (R1= 4.7 kΩ, R2= 4.7 kΩ)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101

Part Name(s) : BCR562
Infineon Technologies
Infineon Technologies
Description : PNP Silicon Digital Transistor

PNP Silicon Digital Transistor

• Built in bias resistor (R1= 4.7 kΩ, R2= 4.7 kΩ)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101

Part Name(s) : PDTA143X
Philips Electronics
Philips Electronics
Description : PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details).

FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.

APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.

Part Name(s) : PDTA143E
NXP Semiconductors.
NXP Semiconductors.
Description : PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning”for package details).

FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.

APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.

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