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Toshiba
Toshiba
Description : TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type

STROBE FLASH APPLICATIONS
HIGH-SPEED SWITCHING APPLICATIONS
DC-DC CONVERTER APPLICATIONS

• Multi-chip discrete device; built-in NPN Transistor for main switch and
   N-ch MOS FET for drive
• High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (NPN Transistor)
• Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)
   (NPN Transistor)
• High-speed switching: tf = 25 ns (typ.) (NPN Transistor)

Part Name(s) : 8H01 TPCP8H01
Toshiba
Toshiba
Description : Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type Multi-Chip Transistor

HIGH-SPEED SWITCHING APPLICATIONS
LORD SWITCHING APPLICATIONS
STROBE FLASH APPLICATIONS

• Multi-chip discrete device; built-in NPN Transistor for main switch and N-ch MOS FET for drive
• High DC current gain: hFE = 250 to 400 (IC = 0.5 A) (NPN Transistor)
• Low collector-emitter saturation voltage: VCE (sat) = 0.13 V (max)
                                                      (NPN Transistor)
• High-speed switching: tf = 25 ns (typ.) (NPN Transistor)

Description : Low-Noise Matched Transistor Array ICs

Description
The THAT 300, 320 and 340 are large geometry, 4-Transistor, monolithic NPN and/or PNP arrays. They exhibit both high speed and low noise, with excellent parameter matching between Transistors of the same gender. Typical base-spreading resistance is 25 Ω for the PNP devices (30 Ω for the low-gain NPNs), so their resulting voltage noise is under 1 nV/√Hz. This makes the 300 series ideally suited for low-noise amplifier input stages, log amplifiers, and many other applications. The four-NPN Transistor array is available in versions selected for hfe with minimums of 150 (300A) or 300 (300B).

FEATURES
• 4 Matched NPN Transistors
    º 300 typical hfe of 100
    º 300A minimum hfe of 150
    º 300B minimum hfe of 300
• 4 Matched PNP Transistors
    º 320 typical hfe of 75
• 2 Matched PNP and 2 Matched NPN Transistors
    º 340 PNP typical hfe of 75
    º 340 NPN typical hfe of 100
• Low Voltage Noise
    º 0.75 nV/ √Hz (PNP)
    º 0.8 nV/ √Hz (NPN)
• High Speed
    º fT = 350 MHz (NPN)
    º fT = 325 MHz (PNP)
• 500 μV matching between devices
• Dielectrically Isolated for low crosstalk and high DC isolation
• 36V VCEO

APPLICATIONS
• Low Noise Front Ends
• Microphone Preamplifiers
• Log/Antilog Amplifiers
• Current Sources
• Current Mirrors
• Multipliers

Description : Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar Transistor arrays. The ISL73096RH consists of three NPN Transistors and two PNP Transistors on a common substrate. The ISL73127RH consists of five NPN Transistors on a common substrate. The ISL73128RH consists of five PNP Transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment.

Features
• Electrically Screened to SMD # 5962-07218
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
   - Gamma Dose (γ) . . . . . . . . . . 3 x 105RAD(Si)
   - SEL Immune . . Bonded Wafer Dielectric Isolation
NPN Gain Bandwidth Product (FT) . . . 8GHz (Typ)
NPN Current Gain (hFE). . . . . . . . . . . . 130 (Typ)
NPN Early Voltage (VA) . . . . . . . . . . . . 50V (Typ)
• PNP Gain Bandwidth Product (FT) . . . 5.5GHz (Typ)
• PNP Current Gain (hFE) . . . . . . . . . . . . . 60 (Typ)
• PNP Early Voltage (VA) . . . . . . . . . . . . 20V (Typ)
• Noise Figure (50Ω) at 1GHz . . . . . . . . 3.5dB (Typ)
• Collector-to-Collector Leakage . . . . . . <1pA (Typ)
• Complete Isolation Between Transistors

Applications
• High Frequency Amplifiers and Mixers
   - Refer to Application Note AN1503
• High Frequency Converters
• Synchronous Detector

Semtech-Electronics
Semtech Electronics LTD.
Description : NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor
High frequency amplifier applications.

NPN Silicon Epitaxial Planar Transistor
High frequency amplifier applications.

NPN Silicon Epitaxial Planar Transistor
High frequency amplifier applications.

Part Name(s) : 2N3553 2N3553
NJSEMI
New Jersey Semiconductor
Description : VHF Silicon NPN Power Transistor

VHF Silicon NPN Power Transistor

The 2N3553 is a Silicon epitaxial planar Transistor of NPN structure. This device is intended for large signal, high Power oscillator-amplifier application in the VHF-UHF (100MC to 400MC) region. The 2N3553 Transistor utilizes a multi-emitter structure consisting of many separate emitter areas interconnected by metal applied on the Silicon wafer using advanced photo-etching techniques. This processing technology applied to these Transistors results in the high efficiency, high-gain characteristics desirable for UHF operation.

Part Name(s) : PH1214-80M
MACOM
Tyco Electronics
Description : Radar Pulsed Power Transistor - 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty

Description
M/A-COM’s PH1214-80M is a Silicon bipolar NPN Power Transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed radars such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed Power applications, the PH1214-80M can produce 80 watts of output Power with medium pulse length (150 µS) at 10 percent duty cycle. The Transistor is housed in a 2-lead, rectangular metalceramic flange package, with internal input and output impedance matching networks. Dissued emitter ballast resistors and gold metalization assure ruggedness and long-term reliability. In addition to L-band pulsed radars, this high performance Power Transistor can also be used in pulsed digital communications systems.

Features
NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package

Formosa
Formosa Technology
Description : Dual NPN Transistor

Dual General Purpose Transistor NPN+NPN Silicon

Features
• High collector-emitterbreakdien voltage. (BVCEO = 40V@I =1mA)
• Small load switch Transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current.
• Offer NPN+NPN in one package
• Capable of 150mW Power dissipation.
• Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT3904DW1-H.

Part Name(s) : PH1214-25M
MACOM
Tyco Electronics
Description : Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty

Description
M/A-COM’s PH1214-25M is a Silicon bipolar NPN Power Transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed radars such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed Power applications, the PH1214-25M can produce 25 watts of output Power with medium pulse length (150 µS) at 10 percent duty cycle. The Transistor is housed in a 2-lead, rectangular metalceramic flange package, with internal input and output impedance matching networks. In addition to L-band pulsed radars, this high performance Transistor can also be used in pulsed digital communication systems.

Features
NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package

Part Name(s) : 2SC2166 C2166
NJSEMI
New Jersey Semiconductor
Description : Silicon NPN Power Transistor Final RF Power Output

Silicon NPN Power Transistor Final RF Power Output

The 2SC2166 is a Silicon NPN epitaxial planar type Transistor designed for RF Power amplifiers in HF band mobile radio applications.

APPLICATION
   3 to 4 Watt Output Power Class AB Amplifiers in HF Band

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