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ON Semiconductor
SCHOTTKY BARRIER RECTIFIER 3.0 AMPERE 200 VOLTS
This device employs the Schottky Barrier principle in a large area metalïtoïsilicon power diode. Stateïofïtheïart geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with JïBend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very High Blocking Voltage ï 200 V
• 175°C Operating Junction Temperature
• GuardïRing for Stress Protection
• NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements: AECïQ101 Qualified and PPAP Capable
• All Packages are PbïFree*
Philips Electronics
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general
purpose switching applications.
Philips Electronics
Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
Features
■ Very low on-state resistance
■ Q101 compliant
■ 175 °C rated
■ logic level compatible.
Applications
■ Automotive systems
■ 12 V, 24 V, and 42 V loads
■ Motors, lamps and solenoids
■ General purpose power switching.
Philips Electronics
Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Features
■ TrenchMOS™ technology
■ Q101 compliant
■ 175 °C rated
■ logic level compatible.
Applications
■ Automotive and general purpose power switching:
◆ 12 V and 24 V loads
◆ Motors, lamps and solenoids.
Philips Electronics
Description
N-channel enhancement mode field-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) TrenchMOS™ technology.
Features
■ 25 A testing of individual die
■ Life-tested to Q101 at 175 °C
■ Inductive energy testing of individual die
■ Automatic visual inspection.
Applications
■ Automotive systems
■ 12 V and 24 V loads
■ Motors, lamps and solenoids
■ General purpose power switching.
Philips Electronics
Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance.
Features
■ TrenchMOSTM technology
■ Q101 compliant
■ 175 °C rated
■ logic level compatible
Applications
■ Automotive systems
■ 12 V, 24 V, and 42 V loads
■ Motors, lamps and solenoids
■ General purpose power switching
Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Features
■ TrenchMOS™ technology
■ Q101 compliant
■ 175 °C rated
■ logic level compatible.
Applications
■ Automotive and general purpose power switching:
◆ 12 V, 24 V, and 42 V loads
◆ Motors, lamps and solenoids.
Philips Electronics
Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology.
Product availability:
PHP101NQ03LT in SOT78 (TO-220AB)
PHU101NQ03LT in SOT533 (I-PAK)
Features
■ Low gate charge
■ Low on-state resistance.
Applications
■ Optimized as a control FET in DC to DC converters.
Philips Electronics
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
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