P/N + Description + Content Search

FAST RECOVERY RECTIFIERS

OPERATING AND STORAGE TEMPERATURE –65°C TO +150°C

1.0 AMPERE-FAST RECOVERY / R-1

1.0 AMPERE-FAST RECOVERY / A-405

1.0 AMPERE-FAST RECOVERY / DO-41

1.0 AMPERE-FAST RECOVERY / SMB

1.0 AMPERE-FAST RECOVERY / SMA

1.0 AMPERE-FAST RECOVERY / SMA (DO-214AC)

1.0 AMPERE-FAST RECOVERY / SMB (DO-214AA)

1.5AMPERE-FAST RECOVERY / DO-15

2.0 AMPERE-FAST RECOVERY / DO-15

2.0 AMPERE-FAST RECOVERY / SMB

2.0 AMPERE-FAST RECOVERY / SMB (DO-214AA)

3.0 AMPERE-FAST RECOVERY / DO-27

3.0 AMPERE-FAST RECOVERY / SMC

3.0 AMPERE-FAST RECOVERY / SMC (DO-214AB)

6.0 AMPERE-FAST RECOVERY / R-6

8.0 AMPERE-FAST RECOVERY / TO-220A

16.0 AMPERE-FAST RECOVERY / TO-220A

16.0 AMPERE-FAST RECOVERY / TO-220

Description
International RECTIFIERs HFA15TB60S is a state of the art ULTRA FAST RECOVERY diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any RECTIFIER previously available. With basic ratings of 600 volts and 8 amps per Leg continuous current, the HFA15TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ULTRA FAST RECOVERY time, the HEXFRED product line features extremely low values of peak RECOVERY current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of RECOVERY. The HEXFRED features combine to offer designers a RECTIFIER with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA15TB60S is ideally suited for applications in POWER supplies and POWER conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

Features
• ULTRAFAST RECOVERY
• ULTRAsoft RECOVERY
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions

Benefits
• Reduced RFI and EMI
• Reduced POWER Loss in Diode and Switching Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count

Description
International RECTIFIERs HFA15TB60 is a state of the art ULTRA FAST RECOVERY diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any RECTIFIER previously available. With basic ratings of 600 volts and 8 amps per Leg continuous current, the HFA15TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ULTRA FAST RECOVERY time, the HEXFRED product line features extremely low values of peak RECOVERY current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of RECOVERY. The HEXFRED features combine to offer designers a RECTIFIER with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA15TB60 is ideally suited for applications in POWER supplies and POWER conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

Features
• ULTRAFAST RECOVERY
• ULTRAsoft RECOVERY
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions

Benefits
• Reduced RFI and EMI
• Reduced POWER Loss in Diode and Switching Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count

Description
International RECTIFIERs HFA15TB60 is a state of the art ULTRA FAST RECOVERY diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any RECTIFIER previously available. With basic ratings of 600 volts and 8 amps per Leg continuous current, the HFA15TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ULTRA FAST RECOVERY time, the HEXFRED product line features extremely low values of peak RECOVERY current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of RECOVERY. The HEXFRED features combine to offer designers a RECTIFIER with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA15TB60 is ideally suited for applications in POWER supplies and POWER conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

Features
• ULTRAFAST RECOVERY
• ULTRAsoft RECOVERY
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions

Benefits
• Reduced RFI and EMI
• Reduced POWER Loss in Diode and Switching Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count

Description
International RECTIFIERs HFA25PB60 is a state of the art ULTRA FAST RECOVERY diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any RECTIFIER previously available. With basic ratings of 600 volts and 25 amps continuous current, the HFA25PB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ULTRA FAST RECOVERY time, the HEXFRED product line features extremely low values of peak RECOVERY current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of RECOVERY. The HEXFRED features combine to offer designers a RECTIFIER with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA25PB60 is ideally suited for applications in POWER supplies and POWER conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

Features
• ULTRAFAST RECOVERY
• ULTRAsoft RECOVERY
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions

Benefits
• Reduced RFI and EMI
• Reduced POWER Loss in Diode and Switching
   Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count

ULTRA FAST RECOVERY Silicon POWER RECTIFIER

Features

Multiple diffusion

Epitaxial – planar

ULTRA FAST forward RECOVERY time

ULTRA FAST reverse RECOVERY time

Low reverse current

Very good reverse current stability at high temperature

Low thermal resistance

Applications
FAST RECTIFIERs in S.M.P.S
Freewheeling diodes and snubber diodes in motor control circuits

Description
International RECTIFIER's HFA08PB60 is a state of the art center tap ULTRA FAST RECOVERY diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any RECTIFIER previously available.
With basic ratings of 600 volts and 8 amps continuous current, the HFA08PB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ULTRA FAST RECOVERY time, the HEXFRED product line features extremely low values of peak RECOVERY current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of RECOVERY.

Features
• ULTRAFAST RECOVERY
• ULTRAsoft RECOVERY
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions

Benefits
• Reduced RFI and EMI
• Reduced POWER Loss in Diode and Switching Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count

Description
International RECTIFIER's HFA08PB60 is a state of the art center tap ULTRA FAST RECOVERY diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any RECTIFIER previously available.
With basic ratings of 600 volts and 8 amps continuous current, the HFA08PB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ULTRA FAST RECOVERY time, the HEXFRED product line features extremely low values of peak RECOVERY current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of RECOVERY.

Features
• ULTRAFAST RECOVERY
• ULTRAsoft RECOVERY
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
• Lead-Free

Benefits
• Reduced RFI and EMI
• Reduced POWER Loss in Diode and Switching Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count

Description
International RECTIFIERs HFA16TA60C is a state of the art center tap ULTRA FAST RECOVERY diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any RECTIFIER previously available. With basic ratings of 600 volts and 15 amps per Leg continuous current, the HFA16TA60C is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ULTRA FAST RECOVERY time, the HEXFRED product line features extremely low values of peak RECOVERY current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of RECOVERY. The HEXFRED features combine to offer designers a RECTIFIER with lower noise and significantly lower switching losses in both the diode and the switching transistor.

Features
• ULTRAFAST RECOVERY
• ULTRAsoft RECOVERY
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions

Benefits
• Reduced RFI and EMI
• Reduced POWER Loss in Diode and Switching Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count

Description
International RECTIFIER's HFA16PB120 is a state of the art ULTRA FAST RECOVERY diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb ombination of characteristics which result in performance which is unsurpassed by any RECTIFIER previously available. With basic ratings of 1200 volts and 16 amps continuous current, the HFA16PB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ULTRA FAST RECOVERY time, the HEXFRED product line features extremely low values of peak RECOVERY current (IRRM) and does not exhibit any tendency to "snap-off" during the tbportion of RECOVERY.

Features
• ULTRAFAST RECOVERY
• ULTRAsoft RECOVERY
• Very Low I_RRM
• Very Low Qrr
• Specified at Operating Conditions

Benefits
• Reduced RFI and EMI
• Reduced POWER Loss in Diode and Switching Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count