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FAST RECOVERY RECTIFIERS

OPERATING AND STORAGE TEMPERATURE –65°C TO +150°C

1.0 AMPERE-FAST RECOVERY / R-1

1.0 AMPERE-FAST RECOVERY / A-405

1.0 AMPERE-FAST RECOVERY / DO-41

1.0 AMPERE-FAST RECOVERY / SMB

1.0 AMPERE-FAST RECOVERY / SMA

1.0 AMPERE-FAST RECOVERY / SMA (DO-214AC)

1.0 AMPERE-FAST RECOVERY / SMB (DO-214AA)

1.5AMPERE-FAST RECOVERY / DO-15

2.0 AMPERE-FAST RECOVERY / DO-15

2.0 AMPERE-FAST RECOVERY / SMB

2.0 AMPERE-FAST RECOVERY / SMB (DO-214AA)

3.0 AMPERE-FAST RECOVERY / DO-27

3.0 AMPERE-FAST RECOVERY / SMC

3.0 AMPERE-FAST RECOVERY / SMC (DO-214AB)

6.0 AMPERE-FAST RECOVERY / R-6

8.0 AMPERE-FAST RECOVERY / TO-220A

16.0 AMPERE-FAST RECOVERY / TO-220A

16.0 AMPERE-FAST RECOVERY / TO-220

DESCRIPTION
VS-HFA06TB120PbF is a state of the art ULTRAFAST RECOVERY diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any RECTIFIER previously available. With basic ratings of 1200 V and 6 A continuous current, the VS-HFA06TB120PbF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ULTRAFAST RECOVERY time, the HEXFRED product line features extremely low values of peak RECOVERY current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of RECOVERY. The HEXFRED features combine to offer designers a RECTIFIER with lower noise and significantly lower switching losses in both the diode and the switching transistor. 

FEATURES
• ULTRAFAST RECOVERY
• UltraSoft RECOVERY
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
• Lead-Free

BENEFITS
• Reduced RFI and EMI
• Reduced POWER Loss in Diode and Switching Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count

[Vishay]

DESCRIPTION
HFA15TB60 is a state of the art ULTRAFAST RECOVERY diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any RECTIFIER previously available. With basic ratings of 600 V and 15 A continuous current, the HFA15TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ULTRAFAST RECOVERY time, the HEXFRED® product line features extremely low values of peak RECOVERY current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of RECOVERY. The HEXFRED features combine to offer designers a RECTIFIER with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA15TB60 is ideally suited for applications in POWER supplies and POWER conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

FEATURES
• ULTRAFAST RECOVERY
• Ultrasoft RECOVERY
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Designed and qualified for industrial level

BENEFITS
• Reduced RFI and EMI
• Reduced POWER loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count

DESCRIPTION
HFA08TA60C is a state of the art ULTRAFAST RECOVERY diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any RECTIFIER previously available. With basic ratings of 600 V and 4 A per leg continuous current, the HFA08TA60C is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ULTRAFAST RECOVERY time, the HEXFRED® product line features extremely low values of peak RECOVERY current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of RECOVERY. The HEXFRED features combine to offer designers a RECTIFIER with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08TA60C is ideally suited for applications in POWER supplies and POWER conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

FEATURES
• ULTRAFAST RECOVERY
• Ultrasoft RECOVERY
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Lead (Pb)-free
• Designed and qualified for industrial level

BENEFITS
• Reduced RFI and EMI
• Reduced POWER loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count

DESCRIPTION
HFA15TB60S is a state of the art ULTRAFAST RECOVERY diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any RECTIFIER previously available. With basic ratings of 600 V and 15 A continuous current, the HFA15TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ULTRAFAST RECOVERY time, the HEXFRED® product line features extremely low values of peak RECOVERY current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of RECOVERY. The HEXFRED features combine to offer designers a RECTIFIER with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA15TB60S is ideally suited for applications in POWER supplies and POWER conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

FEATURES
• ULTRAFAST RECOVERY
• Ultrasoft RECOVERY
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Designed and qualified for industrial level

BENEFITS
• Reduced RFI and EMI
• Reduced POWER loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count

DESCRIPTION
HFA15TB60S is a state of the art ULTRAFAST RECOVERY diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any RECTIFIER previously available. With basic ratings of 600 V and 15 A continuous current, the HFA15TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ULTRAFAST RECOVERY time, the HEXFRED® product line features extremely low values of peak RECOVERY current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of RECOVERY. The HEXFRED features combine to offer designers a RECTIFIER with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA15TB60S is ideally suited for applications in POWER supplies and POWER conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

FEATURES
• ULTRAFAST RECOVERY
• Ultrasoft RECOVERY
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Lead (Pb)-free
• Designed and qualified for Q101 level

BENEFITS
• Reduced RFI and EMI
• Reduced POWER loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count

DESCRIPTION
HFA15TB60 is a state of the art ULTRAFAST RECOVERY diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any RECTIFIER previously available. With basic ratings of 600 V and 15 A continuous current, the HFA15TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ULTRAFAST RECOVERY time, the HEXFRED® product line features extremely low values of peak RECOVERY current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of RECOVERY. The HEXFRED features combine to offer designers a RECTIFIER with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA15TB60 is ideally suited for applications in POWER supplies and POWER conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

FEATURES
• ULTRAFAST RECOVERY
• Ultrasoft RECOVERY
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Designed and qualified for industrial level

BENEFITS
• Reduced RFI and EMI
• Reduced POWER loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count

DESCRIPTION
VS-HFA08TA60CSPbF is a state of the art center tap ULTRAFAST RECOVERY diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any RECTIFIER previously available. With basic ratings of 600 V and 4 A per leg continuous current, the VS-HFA08TA60CSPbF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ULTRAFAST RECOVERY time, the HEXFRED® product line features extremely low values of peak RECOVERY current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of RECOVERY. The HEXFRED features combine to offer designers a RECTIFIER with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA08TA60CSPbF is ideally suited for applications in POWER supplies and POWER conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

FEATURES
• ULTRAFAST RECOVERY
• Ultrasoft RECOVERY
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified

BENEFITS
• Reduced RFI and EMI
• Reduced POWER loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count

DESCRIPTION
HFA25PB60 is a state of the art ULTRAFAST RECOVERY diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any RECTIFIER previously available. With basic ratings of 600 V and 25 A continuous current, the HFA25PB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ULTRAFAST RECOVERY time, the HEXFRED® product line features extremely low values of peak RECOVERY current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of RECOVERY. The HEXFRED features combine to offer designers a RECTIFIER with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA25PB60 is ideally suited for applications in POWER supplies and POWER conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

FEATURES
• ULTRAFAST RECOVERY
• Ultrasoft RECOVERY
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Designed and qualified for industrial level

BENEFITS
• Reduced RFI and EMI
• Reduced POWER loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count

DESCRIPTION
VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF is a state of the art ULTRAFAST RECOVERY diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any RECTIFIER previously available. With basic ratings of 600 V and 15 A continuous current, the VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ULTRAFAST RECOVERY time, the HEXFRED® product line features extremely low values of peak RECOVERY current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of RECOVERY. The HEXFRED features combine to offer designers a RECTIFIER with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF is ideally suited for applications in POWER supplies and POWER conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

FEATURES
• ULTRAFAST and ultrasoft RECOVERY
• Very low IRRM and Qrr
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Halogen-free according to IEC61249-2-21 definition
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
• AEC-Q101 qualified

BENEFITS
• Reduced RFI and EMI
• Reduced POWER loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count