155N3LH6 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

155N3LH6

N-channel 30 V, 2.4 mΩ , 80 A, D²PAK, DPAK STripFET™VI DeepGATE™ Power MOSFET

STMicroelectronics 

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STB155N3LH6, STD155N3LH6

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS Drain-source voltage (VGS = 0)

VGS Gate-source voltage

ID (1) Drain current (continuous) at TC = 25 °C

ID

IDM (2)

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

PTOT

Tstg

Total dissipation at TC = 25 °C

Storage temperature

Tj

Operating junction temperature

1. Limited by wire bonding.

2. Pulse width limited by safe operating area.

Value

Unit

30

V

± 20

V

80

A

80

A

320

A

110

W

°C

-55 to 175

°C

Table 3. Thermal resistance

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-pcb(1) Thermal resistance junction-pcb max

1. When mounted on 1 inch2 OZ Cu board.

Value

D2PAK

DPAK

1.36

35

50

Unit

°C/W

°C/W

Table 4. Thermal resistance

Symbol

Parameter

IAV

EAS (1)

Not-repetitive avalanche current

Single pulse avalanche energy

1. Starting Tj = 25°C, ID = 40 A, VDD = 25 V

Value

Unit

40

A

525

mJ

Doc ID 17893 Rev 3

3/18

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