20NF20 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
20NF20
STMicroelectronics
'20NF20' PDF : 15 Pages View PDF
Electrical characteristics
2
Electrical characteristics
STD20NF20, STF20NF20, STP20NF20
(TCASE=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 1 mA, VGS = 0
200
V
VDS = Max rating
VDS = Max rating, TC = 125 °C
1 µA
10 µA
VGS = ± 20 V
±100 nA
VDS = VGS, ID = 250 µA
2
3
4V
VGS = 10 V, ID = 10 A
0.10 0.125 Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 25 V, ID= 10 A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
td(on)
tr
td(off)
tr
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 100 V, ID = 10 A,
RG= 4.7 Ω VGS = 10 V
(see Figure 15)
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 160 V, ID = 20 A,
VGS = 10 V
(see Figure 16)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
- 13
S
pF
940
pF
- 197
pF
30
15
ns
30
ns
-
40
ns
10
ns
28 39 nC
- 5.6
nC
14.5
nC
4/15
Doc ID 13154 Rev 4
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