MX25L1605D
MX25L3205D
MX25L6405D
ERASE AND PROGRAMMING PERFORMANCE
PARAMETER
Write Status Register Cycle Time
Sector Erase Time
Block Erase Time
Chip Erase Time
64Mb
32Mb
Chip Erase Time (at ACC mode)
16Mb
64Mb
32Mb
16Mb
Byte Program Time (via page program command)
Page Program Time
Page Program Time (at ACC mode)
Erase/Program Cycle
Min.
TYP. (1)
40
60
0.7
50
25
14
30
15
8
9
1.4
1.4
100,000
Max. (2)
100
300
2
80
50
30
48
30
18
300
5
5
UNIT
ms
ms
s
s
s
s
s
s
s
us
ms
ms
cycles
Note:
1. Typical program and erase time assumes the following conditions: 25° C, 3.3V, and checker board pattern.
2. Under worst conditions of 85° C and 2.7V.
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming command.
4. Erase/Program cycles comply with JEDEC JESD-47E & A117A standard.
LATCH-UP CHARACTERISTICS
Input Voltage with respect to GND on ACC
Input Voltage with respect to GND on all power pins, SI, CS#
Input Voltage with respect to GND on SO
Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
MIN.
-1.0V
-1.0V
-1.0V
-100mA
MAX.
10.5V
2 VCCmax
VCC + 1.0V
+100mA
P/N: PM1290
REV. 1.4, OCT. 01, 2008
45