2N2326 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
MFG CO.
'2N2326' PDF : 3 Pages View PDF
2n2322 to 2n2326
SILICON THYRISTORS
All-diffused PNPN thyristors designed for grating operation in mA/µA signal
or detection circuits
Compliance to RoHS.
MAXIMUM RATINGS (*)
TJ=125°C unless otherwise noted, RGK=1000Ω
Symbol
Ratings
2N2322 2N2323 2N2324 2N2325 2N2326 Unit
VRRM(REP)
Peak reverse blocking voltage
(*)
25
VRSM(NON- Non-repetitive peak blocking
REP)
reverse voltage (t<5.0 ms)
40
IT(RMS)
Forward Current RMS (all
conduction angles)
Peak Surge Current
ITSM
(One-Half Cycle, 60Hz)
No Repetition Until Thermal
Equilibrium is Restored.
PGM
PG(AV)
Peak Gate Power – Forward
Average Gate Power -
Forward
IGM
Peak Gate Current – Forward
VGFM
Peak Gate Voltage - Forward
VGRM
TJ
Peak Gate Voltage - Reverse
Operating Junction
Temperature Range
TSTG
Storage Temperature Range
50
100
150
200
V
75
150
225
300
V
1.6
A
15
A
0.1
W
0.01
W
0.1
A
6.0
V
6.0
V
-65 to +125
°C
-65 to +150
12/11/2012
COMSET SEMICONDUCTORS
1|3
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