2N2894 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
MFG CO.
'2N2894' PDF : 2 Pages View PDF
1
2
NPN 2N2894
HIGH-SPEED SATURATED SWITCHES
The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package.
They are intended for high speed, low saturation switching applications up to 100 mA.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VCES
VEBO
IC
PD
TJ
TStg
Ratings
Collector-Emitter Voltage (IB = 0)
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage(VBE = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
@ Tamb = 25°
Total Power Dissipation
@ Tcase= 25°
@ Tcase<100°
Junction Temperature
Storage Temperature range
Value
-12
-12
-12
-4
-200
0.36
1.2
1
-65 to +200
-65 to +200
Unit
V
V
V
V
mA
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-a
RthJ-c
Ratings
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
Value
486
146
Unit
°C/ W
°C/ W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
ICBO
ICES
VCEO (*)
VCES
VCBO
VEBO
Collector Cutoff Current
Collector Cutoff Current
Collector Emitter Breakdown Voltage
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Test Condition(s)
VCB =-6 V, IE =0V,
Tj =125°C
VBE =0 V, VCE =-6 V
IC =-10 mA, IB =0
VBE =0 V, IC =-10 µA
IC =-10 µA, IE =0
IE =-100 µA, IC =0
Min
-
-
-12
-12
-12
-4
Typ Mx
- -10
- -80
-
-
-
-
-
-
-
-
Unit
µA
nA
V
V
V
V
COMSET SEMICONDUCTORS
1/2
Share Link: 
