2N2907AHR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'2N2907AHR' PDF : 16 Pages View PDF
Radiation hardness assurance
2N2907AHR
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ESCC radiation assurance
Each product lot is tested according to the ESCC basic specification 22900, with a minimum
of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as
unirradiated sample, all of them being fully compliant with the applicable ESCC generic
and/or detailed specification.
ST goes beyond the ESCC specification by performing the following procedure:
– Test of 11 pieces by wafer, 5 biased at least 80% of V(BR)CEO, 5 unbiased and 1
kept for reference
– Irradiation at 0.1 rad (Si)/s
– Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10
samples comply with the post radiation electrical characteristics provided in
Table 8.
Delivery together with the parts of the radiation verification test (RVT) report of the particular
wafer used to manufacture the products. This RVT includes the value of each parameter at
30, 50, 70 and 100 krad (Si) and after 24 hour annealing at room temperature and after an
additional 168 hour annealing at 100°C.
Table 7. Radiation summary
Radiation test
100 krad ESCC
Wafer test
each
Part tested
5 biased + 5 unbiased
Dose rate
0.1 rad/s
Acceptance
MIL-STD-750 method 1019
Displacement damage
Agency part number (ex)
Optional
5202/001/04R (1)
ST part number (ex)
SOC2N2907ARHRG
Documents
CoC + RVT
1. Example of the 2N2907A in LCC-3 Gold finish.
10/22
DocID15382 Rev 10
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