2N3019 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
MFG CO.
'2N3019' PDF : 4 Pages View PDF
NPN 2N3019 – 2N3020
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case .
They are intended for high-current, high-frequency amplifier applications.
They feature high gain and low saturation voltages.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VEBO
IC
PD
PD
TJ
TStg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Total Power Dissipation
Junction Temperature
@ Tamb = 25°
@ Tcase= 25°
Storage Temperature range
Value
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
80
140
7
1
0.8
5
200
-65 to +200
Unit
V
V
V
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
RthJ-c
Thermal Resistance, Junction to ambient in free
air
Thermal Resistance, Junction to case
2N3019
2N3020
2N3019
2N3020
Value
35
219
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/4
Share Link: 
