2N3506ALJS View Datasheet(PDF) - Semicoa Semiconductor
Part Name
Description
MFG CO.
'2N3506ALJS' PDF : 2 Pages View PDF
1
2
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3506ALJ)
• JANTX level (2N3506ALJX)
• JANTXV level (2N3506ALJV)
• JANS level (2N3506ALJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, TA = 25OC
Derate linearly above 25OC
Power Dissipation, TC = 25OC
Derate linearly above 25OC
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
PT
PT
RθJA
TJ
TSTG
2N3506AL
Silicon NPN Transistor
Data Sheet
Applications
• General purpose switching transistor
• Low power
• NPN silicon transistor
Features
• Hermetically sealed TO-5 metal can
• Also available in chip configuration
• Chip geometry 1506
• Reference document:
MIL-PRF-19500/349
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
TC = 25°C unless otherwise specified
Rating
Unit
40
Volts
60
Volts
5
Volts
3
A
1
W
5.71
mW/°C
5
W
28.6
mW/°C
175
°C/W
-65 to +200
°C
-65 to +200
°C
Copyright 2002
Rev. E
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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