2N3700DCSM View Datasheet(PDF) - Semelab - > TT Electronics plc

Part Name

Description

MFG CO.

2N3700DCSM

HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

Semelab - > TT Electronics plc  

1 2

SEME

LAB

2N3700DCSM

ELECTRICAL CHARACTERISTICS (per Device) (Tcase = 25°C unless otherwise stated)

VCEO(sus)*

ICBO*

IEBO*

VCE(sat)*

VBE(sat)*

hFE*

V(BR)CBO

V(BR)EBO

Parameter

Collector – Emitter Sustaining Voltage

(IB = 0)

Collector – Base Cut-off Current

(IE = 0)

Emitter Cut-off Current (IC = 0)

Collector – Emitter Saturation Voltage

Base – Emitter Saturation Voltage

DC Current Gain (VCE = 10V)

Collector-base Breakdown Voltage

(IE = 0)

Emitter-base BreakdownVoltage

(IC = 0)

Test Conditions

IC =10mA

VCB = 90V

VCB = 90V

VEB = 5V

IC = 150mA

IC = 500mA

IC = 150mA

IC = 0.1mA

IC = 10mA

IC = 150mA

IC = 500mA

IC = 1A

IC = 150mA

IC = 100µA

Tamb = 150°C

IB = 15mA

IB = 50mA

IB = 15mA

VCE = 10V

VCE = 10V

VCE = 10V

VCE = 10V

VCE = 10V

VCE = 10V

IE = 100µA

Min.

80

50

90

100

50

15

140

7

* Pulse test tp = 300µs , δ ≤ 1%

DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

fT

hfe

CEBO

CCBO

rbb’Cb’c

Parameter

Transition Frequency

Small Signal Current Gain

Emitter-base Capacitance

Collector-base Capacitance

Feedback time constant

Test Conditions

IC = 50mA

IC = 1mA

IC = 0

IC = 0

IC = 10mA

VCE = 10V

VCE = 5V

VEB = 0.5V

VCB = 10V

VCB = 10V

f = 20MHz

f = 1kHz

f = 1MHz

f = 1MHz

f = 4MHz

Min.

100

80

25

Typ.

Typ.

Max. Unit

V

10

nA

10

µA

10

nA

0.2

V

0.5

V

1.1

V

-

-

300

-

-

-

-

V

V

Max.

200

400

60

12

400

Unit

MHz

-

pF

pF

ps

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 2/98

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