2N3767 View Datasheet(PDF) - M/A-COM Technology Solutions, Inc.

Part Name

Description

MFG CO.

2N3767

NPN Power Silicon Transistor

M/A-COM Technology Solutions, Inc. 

1 2 3

2N3766 & 2N3767

NPN Power Silicon Transistor

Absolute Maximum Ratings

Ratings

Collector - Emitter Voltage

2N3766

2N3767

Collector - Base Voltage

2N3766

2N3767

Emitter - Base Voltage

Base Current

Collector Current

Total Power Dissipation @ TA = 25°C1

Operating & Storage Temperature Range

Symbol

VCEO

VCBO

VEBO

IB

IC

PT

TOP, TSTG

1. Derate linearly @ 143 mW / °C between TC = 25°C and TC = 200°C

Thermal Characteristics

Characteristics

Thermal Resistance, Junction to Case

Symbol

RθJC

Outline Drawing

Value

60 Vdc

80 Vdc

80 Vdc

100 Vdc

6 Vdc

2 Vdc

4 Adc

25 W

-65°C to +200°C

Rev. V1

Max. Value

2.66°C/W

2

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