2N3866 View Datasheet(PDF) - Comset Semiconductors

Part Name

Description

MFG CO.

2N3866

SILICON PLANAR EPITAXIAL TRANSISTORS

Comset Semiconductors 

1 2

NPN 2N3866

SILICON PLANAR EPITAXIAL TRANSISTORS

The 2N3866 are NPN transistors mounted in TO-39 metal package with the collector

connected to the case .

They are intended for VHF-UHF class A, B or C amplifier circuits and oscillator applications.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

VCEO

VCES

VEBO

IC

PD

TJ

TStg

Ratings

Collector-Emitter Voltage

Collector-Emitter Voltage (VBE = 0)

Emitter-Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

@ Tcase= 25°

Storage Temperature range

Value

30

55

3.5

0.5

5

200

-65 to +200

Unit

V

V

V

A

Watts

°C

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-c

Thermal Resistance, Junction-case

Value

35

Unit

°C/ W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

ICEO

VCEO (*)

VCES

VEBO

hFE (*)

VCE(SAT) (*)

Ratings

Test Condition(s) Min

Collector Cutoff Current

VCE=28 V, IB=0

-

Collector Emitter Sustaining

Voltage

IC=5 mA, IB=0

30

Collector Base Breakdown Voltage IC=100 µA, VBE=0

55

Emitter Base Breakdown Voltage IE=100 µA, IC=0

3.5

DC Current Gain

IC=50 mA, VCE=5 V 10

IC=360 mA, VCE=5 V 5

Collector-Emitter saturation

Voltage

IC=100 mA

IB=20 mA

-

Typ Max Unit

- 20 µA

-

-

V

-

-

V

-

-

V

-

-

200

-

-

-

1

V

COMSET SEMICONDUCTORS

1/2

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