Plastic-Encapsulate Transistors
Typical Characteristics
2N3906
-100
-80
-60
-40
-20
-0
-0
-1000
Static Characteristic
-500uA
-450uA
-400uA
-350uA
-300uA
-250uA
COMMON
EMITTER
T =25℃
a
-200uA
-150uA
-100uA
I =-50uA
B
-2
-4
-6
COLLECTOR-EMITTER VOLTAGE
-8
V (V)
CE
V
—— I
CEsat
C
-10
β=10
1000
300
100
30
10
-1
-1200
h —— I
FE
C
T =100℃
a
COMMON EMITTER
V =-1V
CE
T =25℃
a
-3
-10
COLLECTOR CURRENT
-30
I (mA)
C
V
—— I
BEsat
C
-100
-200
-300
-100
-30
T =100℃
a
T =25℃
a
-10
-1
-100
-30
-10
-3
-10
-30
COLLECTOR CURRENT I (mA)
C
-100
-200
I —— V
C
BE
COMMON EMITTER
V =-5V
CE
T =100℃
a
-3
T =25℃
a
-1
-0.3
-0.1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
BASE-EMITTER VOLTAGE V (V)
BE
1000
f
T
——
I
C
COMMON EMITTER
V =-20V
CE
T =25℃
a
300
100
-1
-3
-10
COLLECTOR CURRENT
-30
I (mA)
C
-100
-1000
-800
-600
-400
-1
10
3
T =25℃
a
T =100℃
a
-3
-10
-30
COLLECTOR CURRENT I (mA)
C
C / C —— V / V
ob ib
CB EB
β=10
-100
-200
f=1MHz
I =0/I =0
E
C
T =25℃
a
Cib
Cob
1
-0.1
750
625
500
375
250
125
0
0
-0.3
-1
-3
-10
-20
REVERSE BIAS VOLTAGE V (V)
P —— T
C
a
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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