2N4347 View Datasheet(PDF) - Comset Semiconductors

Part Name

Description

MFG CO.

2N4347

HIGH POWER INDUSTRIAL TRANSISTORS

Comset Semiconductors 

1 2 3

2N3442

2N4347

HIGH POWER INDUSTRIAL TRANSISTORS

NPN silicon transistors designed for applications in industrial and commercial equipment including high

fidelity audio amplifiers, series and shunts regulators and power switches.

• Low Collector-Emitter Saturation Voltage –

VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc – 2N4347

• Collector-Emitter Sustaining Voltage-

VCEO(sus) = 120 Vdc (Min) – 2N4347

140 Vdc (Min) – 2N3442

• Excellent Second-Breakdown Capability

ABSOLUTE MAXIMUM RATINGS

Symbol

VCEO

VCB

VEB

IC

IB

PD

TJ

TS

Ratings

#Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Continuous

Peak

Base Current

Continuous

Peak

Total Device Dissipation

Junction Temperature

@ TC = 25°

Derate

above 25°

Storage Temperature

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

(**) This data guaranteed in addition to JEDEC registered data.

Value

120

140

140

160

7.0

5.0

10

10

15 (**)

3.0

7.0

8.0

-

100

117

0.57

0.67

-65 to +200

Unit

V

Vdc

Vdc

Adc

Adc

Watts

W/°C

°C

°C

COMSET SEMICONDUCTORS

1/3

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