2N4351 View Datasheet(PDF) - Linear Integrated System
Part Name
Description
MFG CO.
'2N4351' PDF : 2 Pages View PDF
1
2
Linear Integrated Systems
2N4351
N-CHANNEL MOSFET
ENHANCEMENT MODE
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 2N4351
HIGH DRAIN CURRENT
HIGH GAIN
ABSOLUTE MAXIMUM RATINGS1
ID = 100mA
gfs = 1000µS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature
-55 to +150 °C
Maximum Power Dissipation
Continuous Power Dissipation
375mW
Maximum Current
Drain to Source
100mA
Maximum Voltages
Drain to Body
25V
Drain to Source
Peak Gate to Source2
25V
±125V
TO-72
BOTTOM VIEW
G 2 3D
S 1 4C
* Body tied to Case.
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
BVDSS
Drain to Source Breakdown Voltage
25
VDS(on)
Drain to Source "On" Voltage
ID = 10µA, VGS = 0V
1
V
ID = 2mA, VGS = 10V
VGS(th)
Gate to Source Threshold Voltage
1
5
VDS = 10V, ID = 10µA
IGSS
Gate Leakage Current
10
pA
VGS = ±30V, VDS = 0V
IDSS
Drain Leakage Current "Off"
10
nA VDS = 10V, VGS = 0V
ID(on)
gfs
rDS(on)
Crss
Ciss
Cdb
Drain Current "On"
Forward Transconductance
Drain to Source "On" Resistance
Reverse Transfer Capacitance
Input Capacitance
Drain to Body Capacitance
3
1000
mA VGS = 10V, VDS = 10V
µS VDS = 10V, ID = 2mA, f = 1MHz
300
Ω
VGS = 10V, ID = 0A, f = 1kHz
1.3
VDS = 0V, VGS = 0V, f = 140kHz
5.0
pF
VDS = 10V, VGS = 0V, f = 140kHz
5.0
VDB = 10V, f = 140kHz
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
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