2N4400
Symbol
Parameter
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain
(VCE=1.0Vdc, IC=1.0mAdc)
(VCE=1.0Vdc, IC=10mAdc)
(VCE=1.0Vdc, IC=150mAdc)
(VCE=2.0Vdc, IC=500mAdc)
Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
SMALL-SIGNAL CHARACTERISTICS
COB
Output Capacitance
(VCB=5.0Vdc, f=140KHz)
CIB
Input Capacitance
(VEB=0.5Vdc, f=140KHz)
hfe
Small-Signal Current Gain
(IC=20mAdc, VCE=10Vdc, f=100MHz)
hfe
Small-Signal Current Gain
(IC=1.0mAdc, VCE=10Vdc, f=1.0KHz)
hie
Small-Signal Current Gain
(IC=1.0mAdc, VCE=10Vdc, f=1.0KHz)
hre
Small-Signal Current Gain
(IC=1.0mAdc, VCE=10Vdc, f=1.0KHz)
hoe
Small-Signal Current Gain
(IC=1.0mAdc, VCE=10Vdc, f=1.0KHz)
SWITCHING CHARACTERISTICS
Td
Delay Time
tr
Rise Time
VCC=30Vdc, IC=150mAdc,
IB1=15mAdc, VBE(off)=2.0Vdc
ts
Storage Time
tf
Fall Time
VCC=30Vdc, IC=150mAdc,
IB1=IB2=15mAdc
* Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
MCC
TM
Micro Commercial Components
Min
40
40
50
20
---
---
0.75
---
---
2.0
150
0.5
0.10
1.0
---
---
---
---
Max
150
0.40
0.75
0.95
1.20
6.5
30
---
200
7.5
8.0
30
15
20
225
30
Units
---
Vdc
Vdc
Vdc
Vdc
pF
pF
---
---
KOHM
X 10-4
umhos
ns
ns
ns
ns
Revision: D
www.mccsemi.com
2 of 6
2013/01/01