2N5239 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
'2N5239' PDF : 2 Pages View PDF
1
2
SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2N5239
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0
225
V
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ;RBE≤ 50Ω
250
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A
2.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.125A
5.0
V
VBE(on) Base-Emitter On Voltage
ICEV
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 2A ; VCE= 10V
VCE=300V; VBE= -1.5V
VCE=300V; VBE= -1.5V;TC= 150℃
VCE= 200V; IB= 0
3.0
V
4
5
mA
5 mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
5 mA
hFE-1
DC Current Gain
IC= 0.4A; VCE= 10V
20
80
hFE-2
DC Current Gain
IC= 2A; VCE= 10V
20
80
hFE-3
DC Current Gain
IC= 4.5A; VCE= 10V
5
fT
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V
2
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
250 pF
SPTECH website：www.superic-tech.com
2
Share Link: 
