2N5323 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
MFG CO.
'2N5323' PDF : 3 Pages View PDF
PNP 2N5322 – 2N5323
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
IEBO
VCEO
VCEV
VEBO
hFE (1)
VCE(SAT) (1)
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Breakdown
Voltage
Collector Emitter Breakdown
Voltage
Emitter Base Breakdown
Voltage
DC Current Gain
Collector-Emitter saturation
Voltage
VCB = -80 V, IE =0
VCB = -60 V, IE =0
VEB = -5 V, IC =0
VEB = -4 V, IC =0
IC = -10 mA, IB =0
IC = -100 µA
VBE = 1.5V
IE = -100 µA, IC =0
IC = -500 mA
VCE = -4 V
IC = -1 A
VCE = -2 V
IC = -500 mA, IB = -50 mA
VBE (1)
Base-Emitter Voltage
IC = -500 mA, VCE = -4 V
fT
Transition frequency
ton
Turn-on Time
toff
Turn-off Time
(1) Pulse conditions : tp < 300 µs, δ =1%
IC = -50 mA, VCE = -4 V
f = 10 MHz
IC = -500 mA, VCC = -30 V
IB1 = -50 mA
IC = 500 mA, VCC = 30 V
IB1 = -IB2 = -50 mA
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
Min Typ Mx
- - -0.5
- - -5
- -0.1 -
- -0.5 -
-75 -
-
-50 -
-
-100 -
-
-75 -
-
-6 -
-
-5 -
-
30 - 130
40 - 250
10 -
-
- - -0.7
- - -1.2
- - -1.1
- - -1.4
50 -
-
- - 100
- - 1000
Unit
µA
µA
V
V
V
-
V
V
MHz
ns
ns
COMSET SEMICONDUCTORS
2/3
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