2N5551 View Datasheet(PDF) - DC COMPONENTS
Part Name
Description
MFG CO.
'2N5551' PDF : 1 Pages View PDF
1
DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2N5551
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
180
V
160
V
6
V
600
mA
625
mW
+150
oC
-55 to +150 oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
TO-92
2o Typ
2o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO 180
-
Collector-Emitter Breakdown Voltage BVCEO 160
-
Emitter-Base Breakdown Volatge
BVEBO
6
-
Collector Cutoff Current
ICBO
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage(1) VCE(sat)1
-
-
VCE(sat)2
-
-
Base-Emitter Saturation Voltage(1)
VBE(sat)1
-
-
VBE(sat)2
-
-
DC Current Gain(1)
hFE1
80
-
hFE2
80
-
hFE3
50
-
Transition Frequency
fT
100
-
Output Capacitance
Cob
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
-
50
50
0.15
0.2
1
1
-
400
-
300
6
Classification of hFE2
Rank
A
B
Range
80~200
100~250
C
160~400
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=120V, IE=0
VEB=4V, IC=0
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=1mA, VCE=5V
IC=10mA, VCE=5V
IC=50mA, VCE=5V
IC=10mA, VCE=10V, f=100MHz
VCB=10V, f=1MHz, IE=0
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