2N5551 View Datasheet(PDF) - Diotec Semiconductor Germany
Part Name
Description
MFG CO.
'2N5551' PDF : 2 Pages View PDF
1
2
2N5550 / 2N5551
Characteristics (Tj = 25°C)
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
2N5550
VBEsat
VBEsat
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
2N5551
VBEsat
VBEsat
Collector-Base cutoff current – Kollektor-Base-Reststrom
VCB = 100 V, (E open)
VCB = 120 V, (E open)
2N5550 ICBO
2N5551 ICBO
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 4 V, (C open)
IEBO
Gain-Bandwidth Product – Transitfrequenz
IC = 10 mA, VCE = 10 V, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCBO
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 µA, RG = 2 kΩ,
f = 30 Hz ... 15 kHz
2N5550 F
2N5551 F
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
–
–
1.0 V
–
–
1.2 V
–
–
1.0 V
–
–
1.0 V
–
–
100 nA
–
–
50 nA
–
–
50 nA
100 MHz
–
300 MHz
–
–
6 pF
–
–
10 dB
–
–
8 dB
< 200 K/W 1)
2N5400 / 2N5401
120
[%]
100
80
60
40
20
Ptot
0
0 TA 50
100
150 [°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
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