2N5551 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
'2N5551' PDF : 3 Pages View PDF
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N5551
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 10mA; IB= 1mA
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 50mA; IB= 5mA
VCB= 120V; IE= 0
VCB= 120V; IE= 0 Ta = 100 ℃
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 1mA ; VCE= 5V
hFE
DC Current Gain
IC= 10mA ; VCE= 5V
hFE
DC Current Gain
IC= 50mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V
MIN TYP. MAX UNIT
0.15 V
0.2
V
1.0
V
1.0
V
50 nA
50 uA
50 nA
80
80
250
30
100
300 MHz
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