2N5551 View Datasheet(PDF) - Transys Electronics Limited
Part Name
Description
MFG CO.
'2N5551' PDF : 2 Pages View PDF
1
2
Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2N5551 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM : 0.625 W (Tamb=25℃)
Collector current
ICM: 0.6 A
Collector-base voltage
V(BR)CBO : 180 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage V(BR)CBO
Collector-emitter
voltage
breakdown V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
hFE(1)
DC current gain
hFE(2)
hFE(3)
Collector-emitter saturation voltage VCEsat
Base-emitter saturation voltage
VBEsat
Test conditions
Ic= 100 µA, IE=0
Ic= 100 µA, IB=0
IE= 100 µA, IC=0
VCB= 180 V, IE=0
VEB= 4 V, IC=0
VCE= 5 V, IC= 1 mA
VCE= 5 V, IC = 10 mA
VCE= 5 V, IC= 50 mA
IC= 50 mA, IB= 5 mA
IC= 50 mA, IB= 5 mA
MIN TYP MAX UNIT
180
V
160
V
6
V
0.1
µA
0.1
µA
80
80
250
50
0.5
V
1
V
Transition frequency
CLASSIFICATION OF hFE(2)
Rank
Range
fT
VCE= 5 V,IC= 10 mA, f =30MHz 80
A
80-160
B
120-180
MHz
C
150-250
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