2N5551C View Datasheet(PDF) - AUK -> KODENSHI CORP

Part Name

Description

MFG CO.

2N5551C

NPN Silicon Transistor

AUK -> KODENSHI CORP 

1 2 3 4

Semiconductor

2N5551CN

NPN Silicon Transistor

Descriptions

• General purpose amplifier

• High voltage application

Features

• High collector breakdown voltage : VCBO = 180V, VCEO = 160V

• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)

Ordering Information

Type NO.

2N5551CN

Outline Dimensions

Marking

2N5551C

Package Code

TO-92N

unit : mm

4.20~4.40

2.25 Max.

0.52 Max.

0.90 Max.

1.27 Typ.

12 3

3.55 Typ

0.40 Max.

KSD-T0C061-000

PIN Connections

1. Emitter

2. Collector

3. Base

1

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