2N5551F View Datasheet(PDF) - Unspecified

Part Name

Description

MFG CO.

2N5551F

TRANSISTOR (NPN)

Unspecified 

1 2

SEMICONDUCTOR

TECHNICAL DATA

TRANSISTOR (NPN)

2N5551F

A

C

H

G

FEATURES

Switching and amplification in high voltage

Applications such as telephony

Low current(max. 600mA)

High voltage(max.180V)

Marking: HG1B

D

D

K

FF

123

1. BASE

2. COLLECTOR

3. EMITTER

DIM

A

B

C

D

E

F

G

H

J

K

MILLIMETERS

4.70 MAX

2.50 +_0.20

1.70 MAX

0.45+0.15/-0.10

4.25 MAX

1.50+_ 0.10

0.40 TYP

1.7 MAX

0.7 MIN

0.5+0.15/-0.10

SOT-89

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

Unit

180

V

160

V

6

V

0.6

A

0.5

W

150

℃

-65~150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

Min Typ

Collector-base breakdown voltage

V(BR)CBO IC=100μ A,IE=0

180

Collector-emitter breakdown voltage

V(BR)CEO IC=1mA,IB=0

160

Emitter-base breakdown voltage

V(BR)EBO IE=10 μ A,IC=0

6

Collector cut-off current

ICBO

VCB=120V,IE=0

Emitter cut-off current

IEBO

VEB=4V,IC=0

hFE(1) VCE=5V,IC=1mA

80

DC current gain

hFE(2) VCE=5V,IC=10mA

80

hFE(3) VCE=5V,IC=50mA

30

Collector-emitter saturation voltage

VCE(sat)

VCE(sat)

IC=10mA,IB=1mA

IC=50mA,IB=5mA

Base-emitter voltage

VBE(sat)

VBE(sat)

IC=10mA,IB=1mA

IC=50mA,IB=5mA

Transition frequency

fT

VCE=10V,IC=10mA,f=100MHz

100

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

Noise figure

VCE=5V,Ic=0.2mA,

NF

f=10Hzto15.7KHZ,Rs=10Ω

Max Unit

V

V

V

50

nA

50

nA

300

0.15

V

0.2

V

1

V

1

V

MHz

6

pF

8

dB

2014. 08. 11

Revision No : 0

1/2

Share Link: